Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
PSMN015-100P,127 Nexperia	MOSFET N-CH 100V 75A TO220AB	3217
BUK962R8-60E,118 Nexperia	MOSFET N-CH 60V 120A D2PAK	1458
PMPB43XPE,115 Nexperia	MOSFET P-CH 20V 5A DFN2020MD-6	0
PHB29N08T,118 Nexperia	MOSFET N-CH 75V 27A D2PAK	0
PSMN1R1-25YLC,115 Nexperia	MOSFET N-CH 25V 100A LFPAK56	16
PHP29N08T,127 Nexperia	MOSFET N-CH 75V 27A TO220AB	1406
BUK9Y19-55B,115 Nexperia	MOSFET N-CH 55V 46A LFPAK56	461
BSP130,115 Nexperia	MOSFET N-CH 300V 350MA SOT223	23906
PMV50UPEVL Nexperia	MOSFET P-CH 20V 3.7A TO236AB	0
NX138AKR Nexperia	MOSFET N-CH 60V 190MA TO236AB	272
BUK963R2-40B,118 Nexperia	MOSFET N-CH 40V 100A D2PAK	0
BUK7M8R0-40EX Nexperia	MOSFET N-CH 40V 69A LFPAK33	1262
BUK7240-100A,118 Nexperia	MOSFET N-CH 100V 34A DPAK	0
PMZ320UPEYL Nexperia	MOSFET P-CH 30V 1A DFN1006-3	1595
PSMN4R4-80BS,118 Nexperia	MOSFET N-CH 80V 100A D2PAK	3829
BUK7Y21-40EX Nexperia	MOSFET N-CH 40V 33A LFPAK56	993
PSMN1R0-30YLDX Nexperia	MOSFET N-CH 30V 100A LFPAK56	0
BUK661R9-40C,118 Nexperia	MOSFET N-CH 40V 120A D2PAK	3715
PMV27UPER Nexperia	MOSFET P-CH 20V 4.5A TO236AB	3992
PMN28UNEX Nexperia	MOSFET N-CH 20V 5.5A 6TSOP	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS