Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
PSMN6R0-25YLB,115 Nexperia	MOSFET N-CH 25V 73A LFPAK56	2020
PMXB360ENEAZ Nexperia	MOSFET N-CH 80V 1.1A DFN1010D-3	277
BUK7Y9R9-80EX Nexperia	MOSFET N-CH 80V 89A LFPAK56	1089
PSMN2R0-25MLDX Nexperia	MOSFET N-CH 25V 70A LFPAK33	1435
PMN42XPEAH Nexperia	MOSFET P-CH 20V 5.7A 6TSOP	13017
BUK9Y58-75B,115 Nexperia	MOSFET N-CH 75V 20.73A LFPAK56	50850
PMPB47XP,115 Nexperia	MOSFET P-CH 30V 4A DFN2020MD-6	605
PSMN1R6-30PL,127 Nexperia	POWER FIELD-EFFECT TRANSISTOR, 1	11094
PSMN6R7-40MLDX Nexperia	MOSFET N-CH 40V 50A LFPAK33	0
BUK7Y10-30B,115 Nexperia	MOSFET N-CH 30V 67A LFPAK56	1412
PSMN3R3-40YS,115 Nexperia	MOSFET N-CH 40V 100A LFPAK56	9470
PMZ1000UN,315 Nexperia	MOSFET N-CH 30V 480MA DFN1006-3	721
BSH201,215 Nexperia	MOSFET P-CH 60V 300MA TO236AB	28089
PML340SN,118 Nexperia	MOSFET N-CH 220V 7.3A DFN3333-8	4000
BUK7M17-80EX Nexperia	MOSFET N-CH 80V 43A LFPAK33	0
PSMN013-100BS,118 Nexperia	MOSFET N-CH 100V 68A D2PAK	2319
BSH105,235 Nexperia	MOSFET N-CH 20V 1.05A TO236AB	19473
PMV35EPER Nexperia	MOSFET P-CH 30V 5.3A TO236AB	1196
PSMN1R0-30YLC,115 Nexperia	MOSFET N-CH 30V 100A LFPAK56	0
BUK9D23-40EX Nexperia	MOSFET N-CH 40V 8A DFN2020MD-6	5307

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS