PSMN1R6-30PL,127

Manufacturer Part PSMN1R6-30PL,127
Manufacturer Nexperia
Description POWER FIELD-EFFECT TRANSISTOR, 1
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet PSMN1R6-30PL,127 PDF
Availability 11094 pieces
Shipped from HK warehouse
Expected Shipping Dec 09 - Dec 13 2025
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Product Attributes
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:212 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12.493 pF @ 12 V
FET Feature:-
Power Dissipation (Max):306W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
More Information
PSMN1R6-30PL,127
PSMN1R6-30PL,127
Nexperia PSMN1R6-30PL,127 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
PSMN1R6-30PL,127 PDF
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