Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
APT36N90BC3G Microsemi	MOSFET N-CH 900V 36A TO247	1
APT6017LFLLG Microsemi	MOSFET N-CH 600V 35A TO264	15
APT8024B2LLG Microsemi	MOSFET N-CH 800V 31A T-MAX	7
APT10043JVR Microsemi	MOSFET N-CH 1000V 22A ISOTOP	0
APT20M22B2VRG Microsemi	MOSFET N-CH 200V 100A T-MAX	0
APT70SM70S Microsemi	SICFET N-CH 700V 65A D3PAK	0
APT20M38SVFRG Microsemi	MOSFET N-CH 200V 67A D3PAK	0
APTC90DAM60T1G Microsemi	MOSFET N-CH 900V 59A SP1	0
2N6770 Microsemi	MOSFET N-CH 500V 12A TO3	0
APT20N60BC3G Microsemi	MOSFET N-CH 600V 20.7A TO247-3	0
APT8024LVRG Microsemi	MOSFET N-CH 800V 33A TO264	0
APT20F50S Microsemi	MOSFET N-CH 500V 20A D3PAK	0
APT30M85SVFRG Microsemi	MOSFET N-CH 300V 40A D3PAK	0
APT17N80BC3G Microsemi	MOSFET N-CH 800V 17A TO247-3	0
APT55M65JFLL Microsemi	MOSFET N-CH 550V 63A ISOTOP	0
APT30N60KC6 Microsemi	MOSFET N-CH 600V 30A TO220	0
2N6782 Microsemi	MOSFET N-CH 100V 3.5A TO39	0
APT53N60SC6 Microsemi	MOSFET N-CH 600V 53A D3PAK	0
APT1204R7KFLLG Microsemi	MOSFET N-CH 1200V 3.5A TO220	0
APT30N60SC6 Microsemi	MOSFET N-CH 600V 30A D3PAK	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS