Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
APT30M36JFLL Roving Networks / Microchip Technology	MOSFET N-CH 300V 76A ISOTOP	0
APT6029BLLG Roving Networks / Microchip Technology	MOSFET N-CH 600V 21A TO247	0
APT10045JLL Roving Networks / Microchip Technology	MOSFET N-CH 1000V 21A ISOTOP	0
TP0606N3-G-P002 Roving Networks / Microchip Technology	MOSFET P-CH 60V 320MA TO92-3	0
VP2206N2 Roving Networks / Microchip Technology	MOSFET P-CH 60V 750MA TO39	353
TP2502N8-G Roving Networks / Microchip Technology	MOSFET P-CH 20V 630MA TO243AA	1841
TN2540N3-G Roving Networks / Microchip Technology	MOSFET N-CH 400V 175MA TO92-3	322
APT60N60BCSG Roving Networks / Microchip Technology	MOSFET N-CH 600V 60A TO247	243
APT106N60LC6 Roving Networks / Microchip Technology	MOSFET N-CH 600V 106A TO264	148
APT44F80B2 Roving Networks / Microchip Technology	MOSFET N-CH 800V 47A T-MAX	1
APT75F50B2 Roving Networks / Microchip Technology	MOSFET N-CH 500V 75A T-MAX	0
APT47N60SC3G Roving Networks / Microchip Technology	MOSFET N-CH 600V 47A D3PAK	16
APT30F50B Roving Networks / Microchip Technology	MOSFET N-CH 500V 30A TO247	102
APT9M100S Roving Networks / Microchip Technology	MOSFET N-CH 1000V 9A D3PAK	158
APT17F100B Roving Networks / Microchip Technology	MOSFET N-CH 1000V 17A TO247	37
DN3545N3-G Roving Networks / Microchip Technology	MOSFET N-CH 450V 136MA TO92	3008
TN0106N3-G-P003 Roving Networks / Microchip Technology	MOSFET N-CH 60V 350MA TO92-3	0
APT5014SLLG Roving Networks / Microchip Technology	MOSFET N-CH 500V 35A D3PAK	0
LND150N3-G-P014 Roving Networks / Microchip Technology	MOSFET N-CH 500V 30MA TO92-3	0
TN2124K1-G Roving Networks / Microchip Technology	MOSFET N-CH 240V 134MA TO236AB	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS