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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOI1N60

AOI1N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 1.3A TO251A

0
AOD2C60

AOD2C60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 2A TO252

0
AOT2906

AOT2906

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V TO220

0
AON6448L_001

AON6448L_001

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 11A/65A 8DFN

0
AON7405_001

AON7405_001

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 25A/50A 8DFN

0
AOB298L

AOB298L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 9A/58A TO263

0
AO4476A_104

AO4476A_104

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 15A 8SO

0
AON6524_001

AON6524_001

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 27A/68A 8DFN

0
AOTF2N60L

AOTF2N60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 2A TO220-3F

0
AOD456A

AOD456A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 25V 50A TO252

0
AOL1712

AOL1712

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 16A/65A ULTRASO8

0
AON6562

AON6562

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 29A/32A 8DFN

0
AO4578

AO4578

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 20A 8SOIC

0
AOL1206

AOL1206

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 16A/54A ULTRASO8

0
AOD454AL

AOD454AL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 12A TO252

0
AO6411

AO6411

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 7A 6TSOP

0
AOD242

AOD242

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 14.5A/54A TO252

0
AOTF7T60P

AOTF7T60P

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 7A TO220-3F

0
AO3438

AO3438

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 3A SOT23-3L

0
AOT210L

AOT210L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 20A/105A TO220

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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