Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Image	Part Number	Description / PDF	Quantity	Rfq
	AON7422E_101 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 30V 20A/40A 8DFN	0
	AOD4144_002 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 30V 13A/55A TO252	0
	AO4447A_103 Alpha and Omega Semiconductor, Inc.	MOSFET P-CH 30V 18.5A 8SOIC	0
	AOB11N60L Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 600V 11A TO263	0
	AO4437L Alpha and Omega Semiconductor, Inc.	MOSFET P-CH 12V 11A 8SOIC	0
	AOTF11C60PL Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 600V 11A TO220-3F	0
	AOTF18N65 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 650V 18A TO220-3F	0
	AON7758_001 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 30V 36A/75A 8DFN	0
	AOL1242 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 40V 14A/69A ULTRASO8	0
	AOTF474 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 75V 9A/47A TO220FL	0
	AOD254 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 150V 4.5A/28A TO252	0
	AOTF10T60P Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 600V 10A TO220-3F	0
	AOTF10N60L Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 600V 10A TO220-3F	0
	AO6402L Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 30V 5A 6TSOP	0
	AOD4120L Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 20V 25A TO252	0
	AOT472 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 75V 10A/140A TO220	0
	AON7244 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 60V 20A/50A 8DFN	0
	AOD502 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 25V 15A/46A TO252	0
	AO4485_102 Alpha and Omega Semiconductor, Inc.	MOSFET P-CH 40V 10A 8SO	0
	AO4437 Alpha and Omega Semiconductor, Inc.	MOSFET P-CH 12V 11A 8SOIC	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS