Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXFX80N50P Wickmann / Littelfuse	MOSFET N-CH 500V 80A PLUS247-3	0
IXFN132N50P3 Wickmann / Littelfuse	MOSFET N-CH 500V 112A SOT227B	390
IXTH90P10P Wickmann / Littelfuse	MOSFET P-CH 100V 90A TO247	4960660
IXTA140P05T Wickmann / Littelfuse	MOSFET P-CH 50V 140A TO263	200
IXTQ50N25T Wickmann / Littelfuse	MOSFET N-CH 250V 50A TO3P	0
IXTA64N10L2-TRL Wickmann / Littelfuse	MOSFET N-CH 100V 64A TO263	0
IXFA14N60P Wickmann / Littelfuse	MOSFET N-CH 600V 14A TO263	400
IXFK78N50P3 Wickmann / Littelfuse	MOSFET N-CH 500V 78A TO264AA	343
IXFN230N20T Wickmann / Littelfuse	MOSFET N-CH 200V 220A SOT227B	298
IXTP1N80P Wickmann / Littelfuse	MOSFET N-CH 800V 1A TO220AB	3400
IXTY08N50D2 Wickmann / Littelfuse	MOSFET N-CH 500V 800MA TO252	0
IXFA3N120-TRL Wickmann / Littelfuse	MOSFET N-CH 1200V 3A TO263	0
IXTA42N15T-TRL Wickmann / Littelfuse	MOSFET N-CH 150V 42A TO263	1600
IXFT69N30P Wickmann / Littelfuse	MOSFET N-CH 300V 69A TO268	1230
IXFN55N50F Wickmann / Littelfuse	MOSFET N-CH 500V 55A SOT227B	46
IXFA12N50P Wickmann / Littelfuse	MOSFET N-CH 500V 12A TO263	0
IXTT34N65X2HV Wickmann / Littelfuse	MOSFET N-CH 650V 34A TO268HV	1350
IXTH50N20 Wickmann / Littelfuse	MOSFET N-CH 200V 50A TO247	0
IXFH30N50Q3 Wickmann / Littelfuse	MOSFET N-CH 500V 30A TO247AD	0
IXFN106N20 Wickmann / Littelfuse	MOSFET N-CH 200V 106A SOT-227B	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS