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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMP3099LQ-7

DMP3099LQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 3.8A SOT23 T&R

0
ZXMP7A17KQTC

ZXMP7A17KQTC

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 70V 3.8A TO252

2500
DMPH4029LFGQ-13

DMPH4029LFGQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 8A/22A PWRDI3333

0
DMTH6004SCTBQ-13

DMTH6004SCTBQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 100A TO263AB

2164000
DMP1022UFDF-7

DMP1022UFDF-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 12V 9.5A 6UDFN

0
DMP2066UFDE-7

DMP2066UFDE-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 6.2A 6UDFN

125
DMP3026SFDE-7

DMP3026SFDE-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 10.4A 6UDFN

8103000
ZVN4206AVSTZ

ZVN4206AVSTZ

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 600MA E-LINE

134312000
ZXMN10A25GTA

ZXMN10A25GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 2.9A SOT223

11739
DMN2040U-7

DMN2040U-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 6A SOT23 T&R 3

0
DMP6023LFG-7

DMP6023LFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 7.7A PWRDI3333-8

0
DMG2305UXQ-13

DMG2305UXQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 4.2A SOT23

0
DMN3009SFGQ-7

DMN3009SFGQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 16A PWRDI3333

1630
DMPH3010LPSQ-13

DMPH3010LPSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 60A PWRDI5060-8

0
DMP1096UCB4-7

DMP1096UCB4-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 12V 2.6A U-WLB1010-4

33693
ZXMN2A03E6TA

ZXMN2A03E6TA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 3.7A SOT23-6

277112000
DMN6040SSS-13

DMN6040SSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 5.5A 8SO

619
DMN3051LDM-7

DMN3051LDM-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 4A SOT26

121000
DMN6040SVTQ-13

DMN6040SVTQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 5A TSOT26

10000
DMG2302UK-7

DMG2302UK-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 2.8A SOT23

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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