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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMN30H14DLY-13

DMN30H14DLY-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 300V 210MA SOT89

0
ZXMN6A09KQTC

ZXMN6A09KQTC

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 11.8A TO252

0
DMN3010LK3-13

DMN3010LK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 13.1A/43A TO252

20
ZVN4306GVTA

ZVN4306GVTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 2.1A SOT223

22
DMTH6009SPS-13

DMTH6009SPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V PWRDI5060

0
ZXMP6A13FTA

ZXMP6A13FTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 900MA SOT23-3

0
ZXMP10A18GTA

ZXMP10A18GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 100V 2.6A SOT223

41031
ZVN4306A

ZVN4306A

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 1.1A TO92-3

5073
DMJ70H1D3SJ3

DMJ70H1D3SJ3

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 700V 4.6A TO251

0
DMT616MLSS-13

DMT616MLSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 10A 8SO

42500
DMNH4011SK3-13

DMNH4011SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 50A TO252

0
DMN2075UDW-7

DMN2075UDW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 2.8A SOT363

0
ZVP2110A

ZVP2110A

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 100V 230MA TO92-3

113638000
DMP2010UFG-7

DMP2010UFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 12.7A PWRDI3333

2000
DMT6009LCT

DMT6009LCT

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 37.2A TO220AB

734
DMP2022LSS-13

DMP2022LSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 10A 8SOP

9610
DMN33D8LT-13

DMN33D8LT-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 115MA SOT523

887480000
DMP2066LSS-13

DMP2066LSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 6.5A 8SOP

7500
ZVN4206AV

ZVN4206AV

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 600MA TO92-3

4941
DMTH4007SPSQ-13

DMTH4007SPSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 15.7A PWRDI5060

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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