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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMN3042LFDF-7

DMN3042LFDF-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 7A 6UDFN

193018000
DMG2302UKQ-7

DMG2302UKQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 2.8A SOT23 T&R 3

87000
DMT47M2SFVW-7

DMT47M2SFVW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V PWRDI3333

10000
DMTH3004LFGQ-13

DMTH3004LFGQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 15A PWRDI3333

0
DMN4010LFG-7

DMN4010LFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 11.5A PWRDI3333

3306000
DMTH6016LFDFW-7

DMTH6016LFDFW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 9.4A 6UDFN

6000
DMN2990UFB-7B

DMN2990UFB-7B

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 780MA 3DFN

470000
DMP2165UW-13

DMP2165UW-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 2.5A SOT323 T&R

0
DMTH8008LPS-13

DMTH8008LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 80V 91A PWRDI5060-8

0
DMP22D4UFA-7B

DMP22D4UFA-7B

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 330MA 3DFN0806H4

26371
ZXMP4A16GTA

ZXMP4A16GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 4.6A SOT223

24807
DMNH4006SPSQ-13

DMNH4006SPSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 110A PWRDI5060-8

21387500
DMN1054UCB4-7

DMN1054UCB4-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 8V 2.7A X1-WLB0808-4

332
DMG1012T-13

DMG1012T-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 630MA SOT523 T&R

0
DMTH10H025LK3Q-13

DMTH10H025LK3Q-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 51.7A TO252 T&R

0
DMN2020LSN-7

DMN2020LSN-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 6.9A SC59-3

1093193000
DMTH6005LCT

DMTH6005LCT

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 100A TO220AB

0
DMN61D9UW-7

DMN61D9UW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 340MA SOT323

3135
DMTH6005LPS-13

DMTH6005LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V PWRDI5060

0
DMP3098LQ-7

DMP3098LQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 3.8A SOT23-3

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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