ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMP1011UCB9-7

DMP1011UCB9-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 8V 10A U-WLB1515-9

384111000
DMP2305U-7

DMP2305U-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 4.2A SOT23-3

0
DMPH4029LFG-7

DMPH4029LFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 8A/22A PWRDI3333

0
DMN2005UFG-7

DMN2005UFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 18.1A PWRDI3333

5628
DMG7430LFGQ-13

DMG7430LFGQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 10.5A PWRDI3333

9000
DMN13H750S-7

DMN13H750S-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 130V 1A SOT23

8232
DMN2400UFB-7

DMN2400UFB-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 750MA 3DFN

25561
DMP1009UFDF-7

DMP1009UFDF-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 12V 15A 6UDFN

0
DMN3009SSS-13

DMN3009SSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 15A 8SO T&R 2

25000
DMN3067LW-13

DMN3067LW-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 2.6A SOT-323

969620000
DMN2550UFA-7B

DMN2550UFA-7B

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 600MA 3DFN

5744
ZVP4424ZTA

ZVP4424ZTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 240V 200MA SOT89-3

329
ZVN0545GTA

ZVN0545GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 450V 140MA SOT223

41440
DMP4013SPSQ-13

DMP4013SPSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 11A PWRDI5060

2500
DMN2065UW-7

DMN2065UW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N CH 20V 2.8A SOT323

0
DMT3004LFG-7

DMT3004LFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET NCH 30V 10.4A POWERDI

4000
ZXMN6A09GTA

ZXMN6A09GTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 5.4A SOT223

22065
ZXMN2B03E6TA

ZXMN2B03E6TA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 4.3A SOT23-6

839
DMN2500UFB4-7

DMN2500UFB4-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 810MA 3DFN

2147483647
DMG6402LVT-7

DMG6402LVT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 6A TSOT26

30985

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

RFQ BOM Call Skype Email
Top