Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
C3M0032120K Wolfspeed - a Cree company	SICFET N-CH 1200V 63A TO247-4L	354
C3M0040120D Wolfspeed - a Cree company	1200V 40MOHM SIC MOSFET	0
C3M0045065D Wolfspeed - a Cree company	GEN 3 650V 45 M SIC MOSFET	339
C3M0350120J Wolfspeed - a Cree company	SICFET N-CH 1200V 7.2A TO263-7	874
C3M0075120J Wolfspeed - a Cree company	SICFET N-CH 1200V 30A D2PAK-7	0
C3M0015065K Wolfspeed - a Cree company	SICFET N-CH 650V 120A TO247-4L	0
C3M0016120D Wolfspeed - a Cree company	SICFET N-CH 1200V 115A TO247-3	0
C3M0280090D Wolfspeed - a Cree company	SICFET N-CH 900V 11.5A TO247-3	0
E3M0280090D Wolfspeed - a Cree company	SICFET N-CH 900V 11.5A TO247-3	38
C2M0280120D Wolfspeed - a Cree company	SICFET N-CH 1200V 10A TO247-3	0
C3M0016120K Wolfspeed - a Cree company	SICFET N-CH 1.2KV 115A TO247-4	0
C3M0120100J Wolfspeed - a Cree company	SICFET N-CH 1000V 22A D2PAK-7	0
C2M1000170J Wolfspeed - a Cree company	SICFET N-CH 1700V 5.3A D2PAK	0
C3M0120100K Wolfspeed - a Cree company	SICFET N-CH 1000V 22A TO247-4L	208
C3M0120065D Wolfspeed - a Cree company	650V 120M SIC MOSFET	431
C3M0021120K Wolfspeed - a Cree company	SICFET N-CH 1200V 100A TO247-4L	0
C3M0350120D Wolfspeed - a Cree company	SICFET N-CH 1200V 7.6A TO247-3	56
C3M0075120J-TR Wolfspeed - a Cree company	SICFET N-CH 1200V 30A TO263-7	0
C3M0065100J-TR Wolfspeed - a Cree company	SICFET N-CH 1000V 35A TO263-7	0
CMF10120D Wolfspeed - a Cree company	SICFET N-CH 1200V 24A TO247	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS