Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
TK14N65W5,S1F Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 650V 13.7A TO247	65
TK100S04N1L,LXHQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 40V 100A DPAK	5985
SSM3J375F,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 20V 2A S-MINI	5791
TK35S04K3L(T6L1,NQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 40V 35A DPAK	0
SSM3J378R,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 20V 6A SOT23F	5698
SSM3J36FS,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 20V 330MA SSM	2907
TK10P60W,RVQ Toshiba Electronic Devices and Storage Corporation	MOSFET N CH 600V 9.7A DPAK	1463
TK20P04M1,RQ(S Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 40V 20A DPAK	0
TK12E60W,S1VX Toshiba Electronic Devices and Storage Corporation	MOSFET N CH 600V 11.5A TO-220	0
SSM3K123TU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 20V 4.2A UFM	20912
TPN1110ENH,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 200V 7.2A 8TSON	4190
TK8Q60W,S1VQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 8A IPAK	0
TK12A53D(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 525V 12A TO220SIS	0
SSM3K341TU,LXHF Toshiba Electronic Devices and Storage Corporation	AECQ MOSFET NCH 60V 6A SOT323F	5970
SSM6J503NU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 20V 6A 6UDFNB	1705
TK20V60W5,LVQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 20A 4DFN	1423
TPN5900CNH,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 150V 9A 8TSON	1972
TK25E06K3,S1X(S Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 60V 25A TO220-3	0
TK290P60Y,RQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 11.5A DPAK	2493
TK380A60Y,S4X Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 9.7A TO220SIS	127

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS