Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
TK20G60W,RVQ Toshiba Electronic Devices and Storage Corporation	MOSFET N CH 600V 20A D2PAK	0
SSM6J501NU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 20V 10A 6UDFNB	19026
SSM6J801R,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 20V 6A 6TSOP	1075
TK10Q60W,S1VQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 9.7A IPAK	0
TJ200F04M3L,LXHQ Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 40V 200A TO220SM	0
TK56A12N1,S4X Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 120V 56A TO220SIS	0
SSM3K329R,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N CH 30V 3.5A 2-3Z1A	323306
TK18A50D(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 500V 18A TO220SIS	0
TK110A65Z,S4X Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 650V 24A TO220SIS	122
SSM3K35CT,L3F Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 20V 180MA CST3	12016
TK8A65W,S5X Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 650V 7.8A TO220SIS	0
TK7A90E,S4X Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 900V 7A TO220SIS	12
TPN13008NH,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 80V 18A 8TSON	1913
SSM3K35CTC,L3F Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 20V 250MA CST3C	7845
TK22E10N1,S1X Toshiba Electronic Devices and Storage Corporation	MOSFET N CH 100V 52A TO220	0
TPN30008NH,LQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 80V 9.6A 8TSON	500
SSM6J206FE(TE85L,F Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 20V 2A ES6	6186
SSM3K127TU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 30V 2A UFM	5097
TK16V60W,LVQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 15.8A 4DFN	0
TK110U65Z,RQ Toshiba Electronic Devices and Storage Corporation	DTMOS VI TOLL PD=190W F=1MHZ	4000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS