Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STW13NK100Z STMicroelectronics	MOSFET N-CH 1000V 13A TO247-3	1250
STS7P4LLF6 STMicroelectronics	MOSFET P-CH 40V 7A POWER8-SO	2109
STP11NM60FD STMicroelectronics	MOSFET N-CH 600V 11A TO220AB	900
STL13N60M2 STMicroelectronics	MOSFET N-CH 600V 7A POWERFLAT HV	321
STL40N75LF3 STMicroelectronics	MOSFET N-CH 75V 40A POWERFLAT	3223
STU16N65M5 STMicroelectronics	MOSFET N-CH 650V 12A IPAK	0
STFI13N95K3 STMicroelectronics	MOSFET N CH 950V 10A I2PAKFP	0
STB3NK60ZT4 STMicroelectronics	MOSFET N-CH 600V 2.4A D2PAK	1497
STI18N65M5 STMicroelectronics	MOSFET N CH 650V 15A I2PAK	0
STW15NK90Z STMicroelectronics	MOSFET N-CH 900V 15A TO247-3	218
STL60N10F7 STMicroelectronics	MOSFET N-CH 100V 46A POWERFLAT	57
STE88N65M5 STMicroelectronics	MOSFET N-CH 650V 88A ISOTOP	67
STP10N60M2 STMicroelectronics	MOSFET N-CH 600V 7.5A TO220	212
STL16N65M2 STMicroelectronics	MOSFET N-CH 650V 7.5A POWERFLAT	910
STB18NM80 STMicroelectronics	MOSFET N-CH 800V 17A D2PAK	0
STU6N60M2 STMicroelectronics	MOSFET N-CH 600V 4.5A IPAK	0
STF46N60M6 STMicroelectronics	MOSFET N-CH 600V 36A TO220FP	0
STD14NM50NAG STMicroelectronics	MOSFET N-CH 500V 12A DPAK	2009
STD40P8F6AG STMicroelectronics	MOSFET P-CH 80V DPAK	1125
STD20NF20 STMicroelectronics	MOSFET N-CH 200V 18A DPAK	4

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS