Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STH250N55F3-6 STMicroelectronics	MOSFET N-CH 55V 180A H2PAK	0
STL8N6LF6AG STMicroelectronics	MOSFET N-CH 60V 32A POWERFLAT	0
STP40NF10L STMicroelectronics	MOSFET N-CH 100V 40A TO220AB	2033
STN3N45K3 STMicroelectronics	MOSFET N-CH 450V 600MA SOT223	10685
STB100NF03L-03T4 STMicroelectronics	MOSFET N-CH 30V 100A D2PAK	0
STP13NM60N STMicroelectronics	MOSFET N-CH 600V 11A TO220-3	8
STD95NH02LT4 STMicroelectronics	MOSFET N-CH 24V 80A DPAK	12
STP20NM50FD STMicroelectronics	MOSFET N-CH 500V 20A TO220AB	932
STD120N4F6 STMicroelectronics	MOSFET N-CH 40V 80A DPAK	4802
STL8N65M2 STMicroelectronics	MOSFET N-CH 650V 5A PWRFLAT56 HV	0
STP16NK65Z STMicroelectronics	MOSFET N-CH 650V 13A TO220AB	0
STW70N60DM2 STMicroelectronics	MOSFET N-CH 600V 66A TO247	485
STB45N40DM2AG STMicroelectronics	MOSFET N-CH 400V 38A D2PAK	2438
STP10NM60ND STMicroelectronics	MOSFET N-CH 600V 8A TO220	975
STB22N60M6 STMicroelectronics	MOSFET N-CH 600V 15A D2PAK	198
STD17NF25 STMicroelectronics	MOSFET N-CH 250V 17A DPAK	0
STWA65N65DM2AG STMicroelectronics	MOSFET N-CH 650V 60A TO247	0
STF18N60DM2 STMicroelectronics	MOSFET N-CH 600V 13A TO220FP	0
STP3NK60ZFP STMicroelectronics	MOSFET N-CH 600V 2.4A TO220FP	0
STR2N2VH5 STMicroelectronics	MOSFET N-CH 20V 2.3A SOT23	4293

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS