Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STB60NF06T4 STMicroelectronics	MOSFET N-CH 60V 60A D2PAK	1785
STH3N150-2 STMicroelectronics	MOSFET N-CH 1500V 2.5A H2PAK	0
STF23NM60ND STMicroelectronics	MOSFET N-CH 600V 19.5A TO220FP	0
STB40N60M2 STMicroelectronics	MOSFET N-CH 600V 34A D2PAK	1676
STB9NK90Z STMicroelectronics	MOSFET N-CH 900V 8A D2PAK	985
STWA40N95K5 STMicroelectronics	MOSFET N-CH 950V 38A TO247-3	0
STD45N10F7 STMicroelectronics	MOSFET N-CH 100V 45A DPAK	2286
STH360N4F6-2 STMicroelectronics	MOSFET N-CH 40V 180A H2PAK-2	0
STP11NK40Z STMicroelectronics	MOSFET N-CH 400V 9A TO220AB	964
STU6N90K5 STMicroelectronics	MOSFET N-CH 900V 6A IPAK	192
STP50N60DM6 STMicroelectronics	MOSFET N-CH 600V 36A TO220	76
STF12N60M2 STMicroelectronics	MOSFET N-CH 600V 9A TO220FP	0
STP19NF20 STMicroelectronics	MOSFET N-CH 200V 15A TO220AB	394
STB28N65M2 STMicroelectronics	MOSFET N-CH 650V 20A D2PAK	262
STH260N6F6-6 STMicroelectronics	MOSFET N-CH 60V 180A H2PAK-6	390
STB15N80K5 STMicroelectronics	MOSFET N CH 800V 14A D2PAK	559
STF23N80K5 STMicroelectronics	MOSFET N-CH 800V 16A TO220FP	1478
STB2N62K3 STMicroelectronics	MOSFET N-CH 620V 2.2A TO263	0
STFH24N60M2 STMicroelectronics	MOSFET N-CH 600V 18A TO220FP	103
STF31N65M5 STMicroelectronics	MOSFET N-CH 650V 22A TO220FP	959

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS