Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - RF

Part Number	Description / PDF	Quantity
MRF7S38010HSR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	FET RF 65V 3.6GHZ NI-400S	20
AFT26HW050GSR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF N CHANNEL, MOSFET	0
MRF9002NR2 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF ULTRA HIGH FREQUENCY BAND, N-	0
MRF6S24140HSR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	TRANSISTOR	47
AFV09P350-04GNR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF POWER FIELD-EFFECT TRANSISTOR	253
MRF6S21050LSR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	FET RF 68V 2.16GHZ NI-400S	0
MRF18030ALSR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	FET RF 65V 1.88GHZ NI-400S	50
MRF6P9220HR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	FET RF 68V 880MHZ NI-860C3	50
MRF8P20160HSR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF 2-ELEMENT, L BAND, N-CHANNEL	2952
MRF8S19260HSR6 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF 2-ELEMENT, L BAND, N-CHANNEL	40
MHT1004GNR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF POWER FIELD-EFFECT TRANSISTOR	46
MRF8P23160WHSR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF S BAND, N-CHANNEL	0
MRFE6P9220HR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF 2-ELEMENT, ULTRA HIGH FREQUE	866
MRF6V14300HS Freescale Semiconductor, Inc. (NXP Semiconductors)	FET RF 100V 1.4GHZ NI780S	64
MRF6P9220HR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF 2-ELEMENT, ULTRA HIGH FREQUE	230
MRF8S21200HR6 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF 2-ELEMENT, S BAND, N-CHANNEL	360
MRF6VP121KHR5-FR Freescale Semiconductor, Inc. (NXP Semiconductors)	RF 2-ELEMENT, L BAND, N-CHANNEL	130
A2T26H160-24SR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF POWER FIELD-EFFECT TRANSISTOR	202
MRF8P18265HSR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	POWER, N-CHANNEL, MOSFET	30
MRF5S21100HSR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	FET RF 65V 2.17GHZ NI-780S	50

Transistors - FETs, MOSFETs - RF

1. Overview

RF FETs and MOSFETs are critical semiconductor devices designed for high-frequency signal amplification and switching in radio frequency (RF) applications. These transistors operate efficiently in microwave and RF circuits, enabling wireless communication, radar systems, and broadcasting equipment. Their ability to handle high frequencies (typically above 1 MHz) with minimal noise and distortion makes them indispensable in modern telecommunications infrastructure.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Junction FET (JFET)	Voltage-controlled device with low noise and high input impedance	Low-noise amplifiers in RF receivers
MESFET	Metal-Semiconductor FET with GaAs substrate for high-speed operation	Satellite communication systems
HEMT/PHEMT	High-electron-mobility transistor with pseudomorphic structures	5G base stations, microwave amplifiers
LDMOS	Lateral Diffused MOSFET with high power density and thermal stability	Cellular base station amplifiers
GaN HEMT	Gallium Nitride-based HEMT for ultra-high frequency/power	Radar systems, 5G mmWave

3. Structure and Composition

RF FETs typically feature a three-terminal structure (source, gate, drain) with a semiconductor channel (Si, GaAs, or GaN). The gate region uses Schottky contacts (MESFET) or insulated layers (MOSFET). Advanced devices like HEMTs employ heterojunctions between different semiconductor materials (e.g., AlGaN/GaN) to enhance electron mobility. Packaging includes ceramic or plastic enclosures with RF-compatible connectors to minimize parasitic capacitance and inductance.

4. Key Technical Specifications

Parameter	Description	Importance
Frequency Range	Operational bandwidth (e.g., 0.1-6 GHz)	Determines application suitability
Power Output (P1dB)	1dB compression point (e.g., 10-500W)	Measures linearity and saturation
Gain (S21)	Signal amplification ratio (e.g., 10-30 dB)	System sensitivity indicator
Efficiency (PAE)	Power-added efficiency (e.g., 40-75%)	Energy consumption metric
Input/Output VSWR	Voltage Standing Wave Ratio (e.g., <2:1)	Mismatch loss assessment

5. Application Fields

Telecommunications: 5G/4G base stations, small cells, fiber-optic networks
Defense: Radar systems, electronic warfare, UAV communication
Broadcasting: FM/TV transmitters, satellite uplinks
Medical: MRI machines, RF ablation equipment
Industrial: Plasma generators, RFID readers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
NXP Semiconductors	MRF1K50GN	50W GaN HEMT, 1.8-2.7GHz, 70% PAE
Wolfspeed (Cree)	CGH4G090400F	400W GaN HEMT, 900MHz, 10:1 VSWR ruggedness
Infineon	BLS14H10LS-250	250W LDMOS, 1.8-2.2GHz, 14dB gain
MACOM	NPT1007	SiGe HBT, 7GHz, 18dB gain for 5G

7. Selection Recommendations

Match operating frequency to device transition frequency (f_T)
Verify power handling with derating curves under working temperatures
Assess package thermal resistance (R_th) for longevity
Compare S-parameters for impedance matching requirements
Consider ESD protection and ruggedness for field conditions

8. Industry Trends

Key trends include: - Wide bandgap materials (GaN/SiC) enabling higher efficiency (>80%) at mmWave frequencies - 3D packaging for reduced parasitics in 5G massive MIMO systems - Integrated RF frontend modules (FEM) with on-chip matching networks - AI-driven design optimization for complex impedance matching - Growing adoption of GaN-on-diamond substrates for thermal management