Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - RF

Part Number	Description / PDF	Quantity
MRF6V3090NR1 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF ULTRA HIGH FREQUENCY BAND, N-	85
MRF6V14300HSR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF POWER FIELD-EFFECT TRANSISTOR	391
AFT18HW355SR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF N CHANNEL POWER MOSFET	50
MRF6S23140HR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF S BAND, N-CHANNEL	1160
MRF8P9040NR1 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF POWER FIELD-EFFECT TRANSISTOR	385
MRF8S21100HSR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF S BAND, N-CHANNEL	905
MRF8S21120HSR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF S BAND, N-CHANNEL	399
MRFE6S9201HSR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	FET RF 66V 880MHZ NI-780S	38
MD7P19130HSR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	FET RF 2CH 65V 1.99GHZ NI780HS-4	0
MRF6V14300HR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF POWER FIELD-EFFECT TRANSISTOR	1
MRF8S18120HSR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF L BAND, N-CHANNEL	942
MRF6VP41KHR7 Freescale Semiconductor, Inc. (NXP Semiconductors)	POWER, N-CHANNEL, MOSFET	3
MRF6S18140HR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	FET RF 68V 1.88GHZ NI880	51
MRFE6S9200HR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF ULTRA HIGH FREQUENCY BAND, N-	946
MRF1511NT1 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF VERY HIGH FREQUENCY BAND, N-C	0
AFT26P100-4WSR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF N CHANNEL, MOSFET	120
MRF7S21110HR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	FET RF 65V 2.17GHZ NI-780	0
MRF6V2300NR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF POWER FIELD-EFFECT TRANSISTOR	0
MRF6S18100NBR1 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF L BAND, N-CHANNEL , TO-272	25
MRF6S19140HR3 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF L BAND, N-CHANNEL	405

Transistors - FETs, MOSFETs - RF

1. Overview

RF FETs and MOSFETs are critical semiconductor devices designed for high-frequency signal amplification and switching in radio frequency (RF) applications. These transistors operate efficiently in microwave and RF circuits, enabling wireless communication, radar systems, and broadcasting equipment. Their ability to handle high frequencies (typically above 1 MHz) with minimal noise and distortion makes them indispensable in modern telecommunications infrastructure.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Junction FET (JFET)	Voltage-controlled device with low noise and high input impedance	Low-noise amplifiers in RF receivers
MESFET	Metal-Semiconductor FET with GaAs substrate for high-speed operation	Satellite communication systems
HEMT/PHEMT	High-electron-mobility transistor with pseudomorphic structures	5G base stations, microwave amplifiers
LDMOS	Lateral Diffused MOSFET with high power density and thermal stability	Cellular base station amplifiers
GaN HEMT	Gallium Nitride-based HEMT for ultra-high frequency/power	Radar systems, 5G mmWave

3. Structure and Composition

RF FETs typically feature a three-terminal structure (source, gate, drain) with a semiconductor channel (Si, GaAs, or GaN). The gate region uses Schottky contacts (MESFET) or insulated layers (MOSFET). Advanced devices like HEMTs employ heterojunctions between different semiconductor materials (e.g., AlGaN/GaN) to enhance electron mobility. Packaging includes ceramic or plastic enclosures with RF-compatible connectors to minimize parasitic capacitance and inductance.

4. Key Technical Specifications

Parameter	Description	Importance
Frequency Range	Operational bandwidth (e.g., 0.1-6 GHz)	Determines application suitability
Power Output (P1dB)	1dB compression point (e.g., 10-500W)	Measures linearity and saturation
Gain (S21)	Signal amplification ratio (e.g., 10-30 dB)	System sensitivity indicator
Efficiency (PAE)	Power-added efficiency (e.g., 40-75%)	Energy consumption metric
Input/Output VSWR	Voltage Standing Wave Ratio (e.g., <2:1)	Mismatch loss assessment

5. Application Fields

Telecommunications: 5G/4G base stations, small cells, fiber-optic networks
Defense: Radar systems, electronic warfare, UAV communication
Broadcasting: FM/TV transmitters, satellite uplinks
Medical: MRI machines, RF ablation equipment
Industrial: Plasma generators, RFID readers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
NXP Semiconductors	MRF1K50GN	50W GaN HEMT, 1.8-2.7GHz, 70% PAE
Wolfspeed (Cree)	CGH4G090400F	400W GaN HEMT, 900MHz, 10:1 VSWR ruggedness
Infineon	BLS14H10LS-250	250W LDMOS, 1.8-2.2GHz, 14dB gain
MACOM	NPT1007	SiGe HBT, 7GHz, 18dB gain for 5G

7. Selection Recommendations

Match operating frequency to device transition frequency (f_T)
Verify power handling with derating curves under working temperatures
Assess package thermal resistance (R_th) for longevity
Compare S-parameters for impedance matching requirements
Consider ESD protection and ruggedness for field conditions

8. Industry Trends

Key trends include: - Wide bandgap materials (GaN/SiC) enabling higher efficiency (>80%) at mmWave frequencies - 3D packaging for reduced parasitics in 5G massive MIMO systems - Integrated RF frontend modules (FEM) with on-chip matching networks - AI-driven design optimization for complex impedance matching - Growing adoption of GaN-on-diamond substrates for thermal management