| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
 |
Ampleon |
RF FET LDMOS 65V 19.5DB SOT1244B |
0 |
|
 |
Metelics (MACOM Technology Solutions) |
FET RF 65V 400MHZ 211-07 |
0 |
|
 |
STMicroelectronics |
FET RF 40V 870MHZ |
0 |
|
 |
STMicroelectronics |
IC TRANS RF HF/VHF/UHF M174 |
143 |
|
 |
NXP Semiconductors |
FET RF 68V 880MHZ NI-780S |
0 |
|
 |
Ampleon |
RF FET LDMOS 100V 21DB SOT467C |
40 |
|
 |
SMT LOW NOISE AMPLIFIER, 45 - 60 |
0 |
|
|
 |
Ampleon |
RF FET LDMOS 65V 15.7DB SOT12583 |
0 |
|
 |
NXP Semiconductors |
RF TRANSISTOR |
10 |
|
 |
SMALL SIGNAL FET |
5257 |
|
|
 |
Wolfspeed - a Cree company |
RF MOSFET HEMT 50V 12DFN |
617 |
|
 |
NXP Semiconductors |
FET RF 2CH 65V 2.5GHZ NI-1230-4 |
0 |
|
 |
Freescale Semiconductor, Inc. (NXP Semiconductors) |
RF L BAND, N-CHANNEL |
0 |
|
 |
Ampleon |
RF MOSFET LDMOS 28V SOT502A |
29 |
|
 |
NXP Semiconductors |
FET RF 2CH 40V 520MHZ TO270-4 |
0 |
|
 |
NXP Semiconductors |
RF MOSFET LDMOS 50 OM1230G |
30 |
|
 |
NXP Semiconductors |
FET RF 2CH 133V 512MHZ NI-780-4 |
40 |
|
 |
Renesas Electronics America |
RF POWER N-CHANNEL, MOSFET |
11000 |
|
 |
NCH+SBD 1.8V DRIVE SERIES |
18000 |
|
|
 |
NXP Semiconductors |
IC TRANS RF LDMOS |
202 |
|
RF FETs and MOSFETs are critical semiconductor devices designed for high-frequency signal amplification and switching in radio frequency (RF) applications. These transistors operate efficiently in microwave and RF circuits, enabling wireless communication, radar systems, and broadcasting equipment. Their ability to handle high frequencies (typically above 1 MHz) with minimal noise and distortion makes them indispensable in modern telecommunications infrastructure.
| Type | Functional Features | Application Examples |
|---|---|---|
| Junction FET (JFET) | Voltage-controlled device with low noise and high input impedance | Low-noise amplifiers in RF receivers |
| MESFET | Metal-Semiconductor FET with GaAs substrate for high-speed operation | Satellite communication systems |
| HEMT/PHEMT | High-electron-mobility transistor with pseudomorphic structures | 5G base stations, microwave amplifiers |
| LDMOS | Lateral Diffused MOSFET with high power density and thermal stability | Cellular base station amplifiers |
| GaN HEMT | Gallium Nitride-based HEMT for ultra-high frequency/power | Radar systems, 5G mmWave |
RF FETs typically feature a three-terminal structure (source, gate, drain) with a semiconductor channel (Si, GaAs, or GaN). The gate region uses Schottky contacts (MESFET) or insulated layers (MOSFET). Advanced devices like HEMTs employ heterojunctions between different semiconductor materials (e.g., AlGaN/GaN) to enhance electron mobility. Packaging includes ceramic or plastic enclosures with RF-compatible connectors to minimize parasitic capacitance and inductance.
| Parameter | Description | Importance |
|---|---|---|
| Frequency Range | Operational bandwidth (e.g., 0.1-6 GHz) | Determines application suitability |
| Power Output (P1dB) | 1dB compression point (e.g., 10-500W) | Measures linearity and saturation |
| Gain (S21) | Signal amplification ratio (e.g., 10-30 dB) | System sensitivity indicator |
| Efficiency (PAE) | Power-added efficiency (e.g., 40-75%) | Energy consumption metric |
| Input/Output VSWR | Voltage Standing Wave Ratio (e.g., <2:1) | Mismatch loss assessment |
| Manufacturer | Representative Product | Key Specifications |
|---|---|---|
| NXP Semiconductors | MRF1K50GN | 50W GaN HEMT, 1.8-2.7GHz, 70% PAE |
| Wolfspeed (Cree) | CGH4G090400F | 400W GaN HEMT, 900MHz, 10:1 VSWR ruggedness |
| Infineon | BLS14H10LS-250 | 250W LDMOS, 1.8-2.2GHz, 14dB gain |
| MACOM | NPT1007 | SiGe HBT, 7GHz, 18dB gain for 5G |
Key trends include: - Wide bandgap materials (GaN/SiC) enabling higher efficiency (>80%) at mmWave frequencies - 3D packaging for reduced parasitics in 5G massive MIMO systems - Integrated RF frontend modules (FEM) with on-chip matching networks - AI-driven design optimization for complex impedance matching - Growing adoption of GaN-on-diamond substrates for thermal management