Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - RF

Part Number	Description / PDF	Quantity
CG2H80015D-GP4 Wolfspeed - a Cree company	RF DISCRETE	20
BLL8H1214LS-250U Ampleon	RF FET LDMOS 100V 17DB SOT502B	0
BLF647PS,112 Ampleon	RF FET LDMOS 65V 17DB SOT1121B	57
BLC10G18XS-552AVTZ Ampleon	BLC10G18XS-552AVT/SOT1258/TRAYDP	17
CGH27060F Wolfspeed - a Cree company	RF MOSFET HEMT 28V 440193	156
BLL8H1214L-250U Ampleon	RF FET LDMOS 100V 17DB SOT502A	8
BLF7G22LS-250P,118 Ampleon	RF FET LDMOS 65V 18.5DB SOT539B	0
BF998E6327 IR (Infineon Technologies)	BF998 - RF SMALL SIGNAL TRANSIST	10371
BLF647PSJ Ampleon	RF FET LDMOS 65V 17DB SOT1121B	0
PD54003-E STMicroelectronics	FET RF 25V 500MHZ PWRSO10	0
MRF6S19060NR1 NXP Semiconductors	FET RF 68V 1.93GHZ TO270-4	0
BLC8G27LS-180AVY Ampleon	RF FET LDMOS 65V 14DB SOT12753	50
MCH6305-H-TL-E	PCH 2.5V DRIVE SERIES	279000
BLP05H635XRGY Ampleon	RF FET LDMOS 135V 27DB SOT12242	38
BLP05H675XRY Ampleon	RF FET LDMOS 135V 27DB SOT12232	100
CGHV40100F Wolfspeed - a Cree company	RF MOSFET HEMT 50V 440193	229
MRFE6VP6600NR3 NXP Semiconductors	RF MOSFET LDMOS DL 50V OM780-4	208
MRF8P20165WHSR5 Freescale Semiconductor, Inc. (NXP Semiconductors)	FET RF 2CH 65V 2.01GHZ NI780S4	39
CPH6602-TL-E	NCH+NCH 2.5V DRIVE SERIES	3000
J211-D74Z Sanyo Semiconductor/ON Semiconductor	JFET N-CH 25V 20MA TO92	26000

Transistors - FETs, MOSFETs - RF

1. Overview

RF FETs and MOSFETs are critical semiconductor devices designed for high-frequency signal amplification and switching in radio frequency (RF) applications. These transistors operate efficiently in microwave and RF circuits, enabling wireless communication, radar systems, and broadcasting equipment. Their ability to handle high frequencies (typically above 1 MHz) with minimal noise and distortion makes them indispensable in modern telecommunications infrastructure.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Junction FET (JFET)	Voltage-controlled device with low noise and high input impedance	Low-noise amplifiers in RF receivers
MESFET	Metal-Semiconductor FET with GaAs substrate for high-speed operation	Satellite communication systems
HEMT/PHEMT	High-electron-mobility transistor with pseudomorphic structures	5G base stations, microwave amplifiers
LDMOS	Lateral Diffused MOSFET with high power density and thermal stability	Cellular base station amplifiers
GaN HEMT	Gallium Nitride-based HEMT for ultra-high frequency/power	Radar systems, 5G mmWave

3. Structure and Composition

RF FETs typically feature a three-terminal structure (source, gate, drain) with a semiconductor channel (Si, GaAs, or GaN). The gate region uses Schottky contacts (MESFET) or insulated layers (MOSFET). Advanced devices like HEMTs employ heterojunctions between different semiconductor materials (e.g., AlGaN/GaN) to enhance electron mobility. Packaging includes ceramic or plastic enclosures with RF-compatible connectors to minimize parasitic capacitance and inductance.

4. Key Technical Specifications

Parameter	Description	Importance
Frequency Range	Operational bandwidth (e.g., 0.1-6 GHz)	Determines application suitability
Power Output (P1dB)	1dB compression point (e.g., 10-500W)	Measures linearity and saturation
Gain (S21)	Signal amplification ratio (e.g., 10-30 dB)	System sensitivity indicator
Efficiency (PAE)	Power-added efficiency (e.g., 40-75%)	Energy consumption metric
Input/Output VSWR	Voltage Standing Wave Ratio (e.g., <2:1)	Mismatch loss assessment

5. Application Fields

Telecommunications: 5G/4G base stations, small cells, fiber-optic networks
Defense: Radar systems, electronic warfare, UAV communication
Broadcasting: FM/TV transmitters, satellite uplinks
Medical: MRI machines, RF ablation equipment
Industrial: Plasma generators, RFID readers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
NXP Semiconductors	MRF1K50GN	50W GaN HEMT, 1.8-2.7GHz, 70% PAE
Wolfspeed (Cree)	CGH4G090400F	400W GaN HEMT, 900MHz, 10:1 VSWR ruggedness
Infineon	BLS14H10LS-250	250W LDMOS, 1.8-2.2GHz, 14dB gain
MACOM	NPT1007	SiGe HBT, 7GHz, 18dB gain for 5G

7. Selection Recommendations

Match operating frequency to device transition frequency (f_T)
Verify power handling with derating curves under working temperatures
Assess package thermal resistance (R_th) for longevity
Compare S-parameters for impedance matching requirements
Consider ESD protection and ruggedness for field conditions

8. Industry Trends

Key trends include: - Wide bandgap materials (GaN/SiC) enabling higher efficiency (>80%) at mmWave frequencies - 3D packaging for reduced parasitics in 5G massive MIMO systems - Integrated RF frontend modules (FEM) with on-chip matching networks - AI-driven design optimization for complex impedance matching - Growing adoption of GaN-on-diamond substrates for thermal management