Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - RF

Part Number	Description / PDF	Quantity
BLC2425M8LS300PY Ampleon	RF FET LDMOS 65V 17DB SOT12501	0
PD55035-E STMicroelectronics	FET RF 40V 500MHZ PWRSO-10	0
2SK2854(TE12L,F) Toshiba Electronic Devices and Storage Corporation	MOSFET RF N CH 10V 500MA	55
MRF101AN-START NXP Semiconductors	MRF101AN RF ESSENTIALS COMPONENT	3
MRF1511NT1 Freescale Semiconductor, Inc. (NXP Semiconductors)	RF VERY HIGH FREQUENCY BAND, N-C	0
MPIC2112DW	MPIC2112DW	255
BLF974PU Ampleon	BLF974P/SOT539/TRAY	39
BLF7G20LS-200,118 Ampleon	RF FET LDMOS 65V 18DB SOT502B	41
BLC10G22XS-400AVTZ Ampleon	BLC10G22XS-400AVT/SOT1258/TRAY	50
BF1201WR,115 NXP Semiconductors	MOSFET 2N-CH 10V 30MA SOT343R	123000
FDMC0223	N-CHANNEL POWER TRENCH SYNCFET	6940
3SK292(TE85R,F) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 12.5 30MA SMQ	2691
PD55003TR-E STMicroelectronics	FET RF 40V 500MHZ PWRSO-10	373
BLA6H0912LS-1000U Ampleon	RF FET LDMOS 100V 15.5DB SOT539B	0
PD54008L-E STMicroelectronics	TRANSISTOR RF 5X5 POWERFLAT	0
AFT26H250-24SR6 NXP Semiconductors	FET RF 2CH 65V 2.5GHZ NI1230S-4	0
BLF879PS,112 Ampleon	RF FET LDMOS 104V 21DB SOT539B	55
BF909,215 NXP Semiconductors	MOSFET N-CH 7V 40MA SOT143	2920
BLC9G10XS-120AZ Ampleon	RF LDMOS TRANS 120W SOT1273	71
CLF1G0060S-10 NXP Semiconductors	RF PFET, 1-ELEMENT, C BAND, GALL	394

Transistors - FETs, MOSFETs - RF

1. Overview

RF FETs and MOSFETs are critical semiconductor devices designed for high-frequency signal amplification and switching in radio frequency (RF) applications. These transistors operate efficiently in microwave and RF circuits, enabling wireless communication, radar systems, and broadcasting equipment. Their ability to handle high frequencies (typically above 1 MHz) with minimal noise and distortion makes them indispensable in modern telecommunications infrastructure.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Junction FET (JFET)	Voltage-controlled device with low noise and high input impedance	Low-noise amplifiers in RF receivers
MESFET	Metal-Semiconductor FET with GaAs substrate for high-speed operation	Satellite communication systems
HEMT/PHEMT	High-electron-mobility transistor with pseudomorphic structures	5G base stations, microwave amplifiers
LDMOS	Lateral Diffused MOSFET with high power density and thermal stability	Cellular base station amplifiers
GaN HEMT	Gallium Nitride-based HEMT for ultra-high frequency/power	Radar systems, 5G mmWave

3. Structure and Composition

RF FETs typically feature a three-terminal structure (source, gate, drain) with a semiconductor channel (Si, GaAs, or GaN). The gate region uses Schottky contacts (MESFET) or insulated layers (MOSFET). Advanced devices like HEMTs employ heterojunctions between different semiconductor materials (e.g., AlGaN/GaN) to enhance electron mobility. Packaging includes ceramic or plastic enclosures with RF-compatible connectors to minimize parasitic capacitance and inductance.

4. Key Technical Specifications

Parameter	Description	Importance
Frequency Range	Operational bandwidth (e.g., 0.1-6 GHz)	Determines application suitability
Power Output (P1dB)	1dB compression point (e.g., 10-500W)	Measures linearity and saturation
Gain (S21)	Signal amplification ratio (e.g., 10-30 dB)	System sensitivity indicator
Efficiency (PAE)	Power-added efficiency (e.g., 40-75%)	Energy consumption metric
Input/Output VSWR	Voltage Standing Wave Ratio (e.g., <2:1)	Mismatch loss assessment

5. Application Fields

Telecommunications: 5G/4G base stations, small cells, fiber-optic networks
Defense: Radar systems, electronic warfare, UAV communication
Broadcasting: FM/TV transmitters, satellite uplinks
Medical: MRI machines, RF ablation equipment
Industrial: Plasma generators, RFID readers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
NXP Semiconductors	MRF1K50GN	50W GaN HEMT, 1.8-2.7GHz, 70% PAE
Wolfspeed (Cree)	CGH4G090400F	400W GaN HEMT, 900MHz, 10:1 VSWR ruggedness
Infineon	BLS14H10LS-250	250W LDMOS, 1.8-2.2GHz, 14dB gain
MACOM	NPT1007	SiGe HBT, 7GHz, 18dB gain for 5G

7. Selection Recommendations

Match operating frequency to device transition frequency (f_T)
Verify power handling with derating curves under working temperatures
Assess package thermal resistance (R_th) for longevity
Compare S-parameters for impedance matching requirements
Consider ESD protection and ruggedness for field conditions

8. Industry Trends

Key trends include: - Wide bandgap materials (GaN/SiC) enabling higher efficiency (>80%) at mmWave frequencies - 3D packaging for reduced parasitics in 5G massive MIMO systems - Integrated RF frontend modules (FEM) with on-chip matching networks - AI-driven design optimization for complex impedance matching - Growing adoption of GaN-on-diamond substrates for thermal management