Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
TPS2013APWR Texas Instruments	HIGH-SIDE MOSFET SWITCH	0
ULN2003V12PWR Texas Instruments	MOSFET 7CH 16TSSOP	2405
CSD87501L Texas Instruments	MOSFET 2N-CH 30V 10PICOSTAR	598
CSD87335Q3DT Texas Instruments	MOSFET 2N-CH 30V 25A	218
TPS1120D Texas Instruments	MOSFET 2P-CH 15V 1.17A 8SOIC	0
CSD87381PT Texas Instruments	MOSFET 2N-CH 30V 15A 5PTAB	0
CSD87588NT Texas Instruments	MOSFET 2N-CH 30V 25A 5PTAB	1478
CSD86356Q5DT Texas Instruments	SYNCHRONOUS BUCK NEXFET POWER BL	450
CSD86311W1723 Texas Instruments	MOSFET 2N-CH 25V 4.5A 12DSBGA	2499
CSD86330Q3D Texas Instruments	MOSFET 2N-CH 25V 20A 8LSON	5000
CSD85301Q2 Texas Instruments	MOSFET 2N-CH 20V 5A 6WSON	8272
CSD87330Q3D Texas Instruments	MOSFET 2N-CH 30V 20A 8SON	35635
CSD87381P Texas Instruments	MOSFET 2N-CH 30V 15A 5PTAB	0
CSD88584Q5DC Texas Instruments	MOSFET 2 N-CH 40V 22-VSON-CLIP	1132
CSD87350Q5D Texas Instruments	MOSFET 2N-CH 30V 40A 8LSON	317810000
CSD87502Q2T Texas Instruments	MOSFET 2N-CH 30V 5A 6WSON	8512
CSD87384M Texas Instruments	MOSFET 2N-CH 30V 30A 5PTAB	2500
CSD85312Q3E Texas Instruments	MOSFET 2N-CH 20V 39A 8VSON	3607
CSD86356Q5D Texas Instruments	25V POWERBLOCK N CH MOSFET	0
CSD86360Q5D Texas Instruments	MOSFET 2N-CH 25V 50A 8SON	2653

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies