Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
CSD85302L Texas Instruments	MOSFET 2N-CH 20V 5A	4573
CSD87351Q5D Texas Instruments	MOSFET 2N-CH 30V 32A 8LSON	3432
TPIC1504DW Texas Instruments	SMALL SIGNAL FIELD-EFFECT TRANSI	100
CSD75207W15 Texas Instruments	MOSFET 2P-CH 3.9A 9DSBGA	0
CSD87352Q5D Texas Instruments	MOSFET 2N-CH 30V 25A 8SON	263610000
CSD87501LT Texas Instruments	MOSFET 2N-CH 30V 10PICOSTAR	4635500
CSD87588N Texas Instruments	MOSFET 2N-CH 30V 25A 5PTAB	24039
CSD86350Q5D Texas Instruments	MOSFET 2N-CH 25V 40A 8SON	1743
UC3724DW Texas Instruments	BUFFER/INVERTER BASED MOSFET DRI	3638
TPS1120DR Texas Instruments	MOSFET 2P-CH 15V 1.17A 8-SOIC	2224
TPIC1533DW Texas Instruments	1.5A, 20V, N-CHANNEL, MOSFET	1547
CSD87313DMST Texas Instruments	MOSFET 2 N-CHANNEL 30V 8WSON	1377
CSD86350Q5DT Texas Instruments	25V POWERBLOCK N CH MOSFET	270
CSD87353Q5D Texas Instruments	MOSFET 2N-CH 30V 40A 8LSON	48531
CSD88537NDT Texas Instruments	MOSFET 2N-CH 60V 15A 8SOIC	472010000
CSD88537ND Texas Instruments	MOSFET 2N-CH 60V 15A 8SOIC	28380
CSD87333Q3DT Texas Instruments	MOSFET 2N-CH 30V 15A 8VSON	880
TPIC1502DW Texas Instruments	SMALL SIGNAL N-CHANNEL MOSFET	637
CSD75211W1723 Texas Instruments	P-CHANNEL POWER MOSFET	0
CSD86336Q3DT Texas Instruments	SYNCHRONOUS BUCK NEXFET POWER BL	330

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies