Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
TPC8223-H,LQ(S Toshiba Electronic Devices and Storage Corporation	MOSFET 2N-CH 30V 9A 8SOP	0
SSM6L61NU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N/P-CH 20V 4A UDFN6	3336
SSM6N357R,LF Toshiba Electronic Devices and Storage Corporation	SMALL LOW R-ON MOSFETS DUAL NCH	2085
SSM6L16FETE85LF Toshiba Electronic Devices and Storage Corporation	MOSFET N/P-CH 20V 0.18A/0.1A ES6	79
SSM6P35AFU,LF Toshiba Electronic Devices and Storage Corporation	SMALL SIGNAL MOSFET P-CH X 2 VDS	5522
SSM6P40TU,LF Toshiba Electronic Devices and Storage Corporation	SMALL SIGNAL MOSFET P-CHX2 VDSS-	8712
SSM6N35AFE,LF Toshiba Electronic Devices and Storage Corporation	MOSFET 2 N-CHANNEL 20V 250MA ES6	12526
SSM6N951L,EFF Toshiba Electronic Devices and Storage Corporation	SMALL SIGNAL MOSFET RDSON: 4.4MO	9950
SSM6N35AFU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET 2 N-CHANNEL 20V 250MA US6	2536
SSM6N68NU,LF Toshiba Electronic Devices and Storage Corporation	SMALL LOW RON DUAL NCH MOSFETS H	1595
SSM6N36TU,LF Toshiba Electronic Devices and Storage Corporation	SMALL SIGNAL MOSFET N-CH X 2 VDS	5550
SSM6N37FU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET 2 N-CHANNEL 20V 250MA US6	2588
SSM6L36TU,LF Toshiba Electronic Devices and Storage Corporation	SMALL SIGNAL MOSFET N-CH + P-CH	5984
SSM6N15AFU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET 2N-CH 30V 0.1A 2-2J1C	1585
SSM6N15AFE,LM Toshiba Electronic Devices and Storage Corporation	MOSFET 2N-CH 30V 0.1A ES6	0
SSM6N48FU,LF Toshiba Electronic Devices and Storage Corporation	X34 PB-F SOT-363 S-MOS (LF) TRAN	0
SSM6N35FE,LM Toshiba Electronic Devices and Storage Corporation	MOSFET 2N-CH 20V 0.18A ES6	1609
SSM6N61NU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET 2N-CH 20V 4A UDFN	0
SSM6N55NU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET 2N-CH 30V 4A UDFN6	0
SSM6L56FE,LM Toshiba Electronic Devices and Storage Corporation	SMALL-SIGNAL MOSFET 2 IN 1 NCH +	7938

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies