Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
SSM6L40TU,LF Toshiba Electronic Devices and Storage Corporation	X34 PB-F UF6 S-MOS (LF) TRANSIST	14818
SSM6L14FE(TE85L,F) Toshiba Electronic Devices and Storage Corporation	X34 PB-F SMALL LOW ON RESISTANCE	15662
TPC8407,LQ(S Toshiba Electronic Devices and Storage Corporation	MOSFET N/P-CH 30V 9A/7.4A 8SOP	0
SSM6L12TU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N/P-CH 30V 500MA UF6	0
SSM6N16FUTE85LF Toshiba Electronic Devices and Storage Corporation	MOSFET 2N-CH 20V 0.1A US6	5360
SSM6L35FU(TE85L,F) Toshiba Electronic Devices and Storage Corporation	MOSFET N/P-CH 20V 0.18A/0.1A US6	0
SSM6N17FU(TE85L,F) Toshiba Electronic Devices and Storage Corporation	X34 SMALL LOW RON DUAL NCH MOSFE	3170
SSM6L35FE,LM Toshiba Electronic Devices and Storage Corporation	MOSFET N/P-CH 20V 0.18A/0.1A ES6	823
SSM6L39TU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N/P-CH 20V 0.8A UF6	0
SSM6N57NU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET 2N-CH 30V 4A UDFN6	3548
SSM6N7002CFU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET 2N-CH 60V 0.17A US6	23582
SSM6N815R,LF Toshiba Electronic Devices and Storage Corporation	MOSFET 2N-CH 100V 2A 6TSOPF	314
SSM6N16FE,L3F Toshiba Electronic Devices and Storage Corporation	SMALL SIGNAL MOSFET N-CH X 2 VDS	6687
SSM6P39TU,LF Toshiba Electronic Devices and Storage Corporation	SMALL SIGNAL MOSFET P-CHX2 VDSS-	5810
SSM6N39TU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET 2 N-CHANNEL 20V 1.6A UF6	0
SSM6N56FE,LM Toshiba Electronic Devices and Storage Corporation	MOSFET 2N-CH 20V 0.8A	27
SSM6P36FE,LM Toshiba Electronic Devices and Storage Corporation	MOSFET 2P-CH 20V 0.33A ES6	0
SSM6P15FU,LF Toshiba Electronic Devices and Storage Corporation	SMALL SIGNAL MOSFET P-CH X 2 VDS	4431
SSM6L36FE,LM Toshiba Electronic Devices and Storage Corporation	MOSFET N/P-CH 20V 0.5A/0.33A ES6	48198
SSM6N58NU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET 2N-CH 30V 4A UDFN6	20471

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies