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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
STS8DN6LF6AG

STS8DN6LF6AG

STMicroelectronics

MOSFET 2 N-CHANNEL 60V 8A 8SO

5978
STL8DN6LF3

STL8DN6LF3

STMicroelectronics

MOSFET 2N-CH 60V 20A 5X6

1325
STL20DN10F7

STL20DN10F7

STMicroelectronics

MOSFET 2N-CH 100V 20A PWRFLAT56

0
STL7DN6LF3

STL7DN6LF3

STMicroelectronics

MOSFET 2N-CH 60V 20A 5X6

2855
STL76DN4LF7AG

STL76DN4LF7AG

STMicroelectronics

AUTOMOTIVE-GRADE DUAL N-CHANNEL

0
STL66DN3LLH5

STL66DN3LLH5

STMicroelectronics

MOSFET 2N-CH 30V 78.5A PWRFLAT56

105
STS2DNF30L

STS2DNF30L

STMicroelectronics

MOSFET 2N-CH 30V 3A 8SOIC

5335
STS9D8NH3LL

STS9D8NH3LL

STMicroelectronics

MOSFET 2N-CH 30V 8A/9A 8SOIC

558
STS8C5H30L

STS8C5H30L

STMicroelectronics

MOSFET N/P-CH 30V 8A/5.4A 8SOIC

1701
STS4DNF60L

STS4DNF60L

STMicroelectronics

MOSFET 2N-CH 60V 4A 8-SOIC

8987
STS4DPF20L

STS4DPF20L

STMicroelectronics

MOSFET 2P-CH 20V 4A 8SOIC

0
STS1DNC45

STS1DNC45

STMicroelectronics

MOSFET 2N-CH 450V 0.4A 8SOIC

3861
STL13DP10F6

STL13DP10F6

STMicroelectronics

MOSFET 2P-CH 100V 13A PWRFLAT56

0
STL50DN6F7

STL50DN6F7

STMicroelectronics

MOSFET N-CH 60V 57A POWERFLAT

0
STS5DNF60L

STS5DNF60L

STMicroelectronics

MOSFET 2N-CH 60V 5A 8-SOIC

337
STL15DN4F5

STL15DN4F5

STMicroelectronics

MOSFET 2N-CH 40V 60A POWERFLAT

0
STS8DN3LLH5

STS8DN3LLH5

STMicroelectronics

MOSFET 2N-CH 30V 10A 8SO

0
STS8DNF3LL

STS8DNF3LL

STMicroelectronics

MOSFET 2N-CH 30V 8A 8-SOIC

537
STS10DN3LH5

STS10DN3LH5

STMicroelectronics

MOSFET 2N-CH 30V 10A 8-SOIC

3349
STL8DN10LF3

STL8DN10LF3

STMicroelectronics

MOSFET 2N-CH 100V 20A 5X6

1997

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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