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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
BUK7K17-80EX

BUK7K17-80EX

Nexperia

MOSFET 2 N-CH 80V 21A LFPAK56D

1494
SIA938DJT-T1-GE3

SIA938DJT-T1-GE3

Vishay / Siliconix

DUAL N-CHANNEL 20-V (D-S) MOSFET

5910
FDG6308P

FDG6308P

Sanyo Semiconductor/ON Semiconductor

MOSFET 2P-CH 20V 600MA SC88

5990
2N7002DW-TP

2N7002DW-TP

Micro Commercial Components (MCC)

MOSFET 2N-CH 60V 0.115A SOT-363

138226
MSCSM70VM10C4AG

MSCSM70VM10C4AG

Roving Networks / Microchip Technology

PM-MOSFET-SIC-SBD~-SP4

9
FDW2507N

FDW2507N

SMALL SIGNAL N-CHANNEL MOSFET

28438
CSD87588N

CSD87588N

Texas Instruments

MOSFET 2N-CH 30V 25A 5PTAB

24039
CSD86350Q5D

CSD86350Q5D

Texas Instruments

MOSFET 2N-CH 25V 40A 8SON

1743
HP8MA2TB1

HP8MA2TB1

ROHM Semiconductor

HP8MA2 IS LOW ON-RESISTANCE AND

2467
SSM6P15FE(TE85L,F)

SSM6P15FE(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

MOSFET 2P-CH 30V 0.1A ES6

13143
UPA2791GR-E1-AT

UPA2791GR-E1-AT

Renesas Electronics America

POWER, 5A, 30V, N-CHANNEL MOSFET

90000
DMN63D8LDWQ-7

DMN63D8LDWQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 30V 0.22A SOT363

1008
SSM6N44FE,LM

SSM6N44FE,LM

Toshiba Electronic Devices and Storage Corporation

MOSFET 2N-CH 30V 0.1A ES6

0
EMH2407-S-TL-H

EMH2407-S-TL-H

NCH+NCH 2.5V DRIVE SERIES

12000
SIX3134K-TP

SIX3134K-TP

Micro Commercial Components (MCC)

N-CHANNELMOSFETSOT-563

29830
PMV65XPEA,215

PMV65XPEA,215

Nexperia

2.8A, 20V, P CHANNEL, SILICON, M

348000
FDW2601NZ

FDW2601NZ

N-CHANNEL POWER MOSFET

0
IRF7380PBF

IRF7380PBF

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
PMGD290UCEAX

PMGD290UCEAX

Nexperia

MOSFET N/P-CH 20V 6TSSOP

24562
BSD235CH6327XTSA1

BSD235CH6327XTSA1

IR (Infineon Technologies)

MOSFET N/P-CH 20V SOT363

21619

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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