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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
IPG20N04S408AATMA1

IPG20N04S408AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 8TDSON

5949
UPA1759G-E1-AT

UPA1759G-E1-AT

Renesas Electronics America

N-CHANNEL POWER MOSFET

1986
SSM6P54TU,LF

SSM6P54TU,LF

Toshiba Electronic Devices and Storage Corporation

SMALL SIGNAL MOSFET P-CHX2 VDSS-

5610
QS8J1TR

QS8J1TR

ROHM Semiconductor

MOSFET 2P-CH 12V 4.5A TSMT8

1804
6LN04CH-TL-E-ON

6LN04CH-TL-E-ON

N-CHANNEL SILICON MOSFET

72000
NTGD3148NT1G

NTGD3148NT1G

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH 20V 3A 6TSOP

0
STL76DN4LF7AG

STL76DN4LF7AG

STMicroelectronics

AUTOMOTIVE-GRADE DUAL N-CHANNEL

0
ZXMHC10A07N8TC

ZXMHC10A07N8TC

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N/2P-CH 100V 8-SOIC

0
FDMD8260L

FDMD8260L

SMALL SIGNAL FIELD-EFFECT TRANSI

1400
EPC2106

EPC2106

EPC

GANFET TRANS SYM 100V BUMPED DIE

1183
TQM150NB04DCR RLG

TQM150NB04DCR RLG

TSC (Taiwan Semiconductor)

AUTOMOTIVE 40V MOSFET, 15M, DUAL

2500
DMN5L06DMKQ-7

DMN5L06DMKQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 50V 305MA SOT26

5920
FF6MR12KM1PHOSA1

FF6MR12KM1PHOSA1

IR (Infineon Technologies)

MEDIUM POWER 62MM

0
FDMS7602S

FDMS7602S

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH 30V 12A/17A POWER56

5566
SQJ963EP-T1_GE3

SQJ963EP-T1_GE3

Vishay / Siliconix

MOSFET 2 P-CH 60V POWERPAK SO8

14795
BSO303PHXUMA1

BSO303PHXUMA1

IR (Infineon Technologies)

7A, 30V, 0.021OHM, 2-ELEMENT, P

6210
SSM6N24TU,LF

SSM6N24TU,LF

Toshiba Electronic Devices and Storage Corporation

SMALL SIGNAL MOSFET N-CHX2 VDSS3

9175
EFC6605R-TR

EFC6605R-TR

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH 6EFCP

489335000
MCH6630-TL-E-ON

MCH6630-TL-E-ON

N-CHANNEL MOSFET

93000
DMN601DWKQ-7

DMN601DWKQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CHAN 41V 60V SOT363

1446363000

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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