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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
DMC2710UV-7

DMC2710UV-7

Zetex Semiconductors (Diodes Inc.)

MOSFET BVDSS: 8V-24V SOT563

147000
NTMFD4C87NT1G

NTMFD4C87NT1G

POWER, N-CHANNEL, MOSFET

10500
EMH2314-TL-H

EMH2314-TL-H

SMALL SIGNAL FET

670700
MCM3400A-TP

MCM3400A-TP

Micro Commercial Components (MCC)

N-CHANNEL,MOSFETS,DFN2020-6L PAC

3453
SI6913DQ-T1-GE3

SI6913DQ-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 12V 4.9A 8-TSSOP

17968
DMP2075UFDB-7

DMP2075UFDB-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 6UDFN

117031
NDM3000

NDM3000

SMALL SIGNAL P-CHANNEL MOSFET

16509
FDPC5018SG

FDPC5018SG

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH 30V PWRCLIP56

0
ALD210802SCL

ALD210802SCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

0
FDS9933A

FDS9933A

Sanyo Semiconductor/ON Semiconductor

MOSFET 2P-CH 20V 3.8A 8SOIC

254412500
NDS9959

NDS9959

N-CHANNEL POWER MOSFET

0
AO4892

AO4892

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 100V 4A 8SOIC

0
IRF7379TRPBF

IRF7379TRPBF

IR (Infineon Technologies)

IRF7379 - PLANAR <=40V

190
FDZ2553N

FDZ2553N

N-CHANNEL POWER MOSFET

135576
IRF7341TRPBF

IRF7341TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 55V 4.7A 8-SOIC

0
AO4832

AO4832

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 10A 8SOIC

0
ALD1105SBL

ALD1105SBL

Advanced Linear Devices, Inc.

MOSFET 2N/2P-CH 10.6V 14SOIC

27
2N7002VAC-7

2N7002VAC-7

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 60V 0.28A SOT-563

66000
CMLDM7003 TR

CMLDM7003 TR

Central Semiconductor

MOSFET 2N-CH 50V 0.28A SOT563

4590
RJK03C0DPA-WS#J5A

RJK03C0DPA-WS#J5A

Renesas Electronics America

N-CHANNEL POWER SWITCHING

2560

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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