ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
IRF9389TRPBF

IRF9389TRPBF

IR (Infineon Technologies)

MOSFET N/P-CH 30V 6.8A/4.6A 8-SO

0
NVMFD5C462NLWFT1G

NVMFD5C462NLWFT1G

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH 40V 84A S08FL

93
DMN33D8LDW-13

DMN33D8LDW-13

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 30V 0.25A

0
NTMD3P03R2

NTMD3P03R2

P-CHANNEL MOSFET

187751
VT6M1T2CR

VT6M1T2CR

ROHM Semiconductor

MOSFET N/P-CH 20V 0.1A VMT6

0
AON6998

AON6998

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 19A/26A DFN

1458
NTLUD3A50PZTAG

NTLUD3A50PZTAG

Sanyo Semiconductor/ON Semiconductor

MOSFET 2P-CH 20V 2.8A UDFN

5379
IPA126N10N3G

IPA126N10N3G

IR (Infineon Technologies)

35A, 100V, 0.0126OHM, N-CHANNEL

1450
MCQ4559-TP

MCQ4559-TP

Micro Commercial Components (MCC)

N&P-CHANNEL MOSFET, SOP-8 PACKAG

0
NDS9952A

NDS9952A

Sanyo Semiconductor/ON Semiconductor

MOSFET N/P-CH 30V 3.7/2.9A 8SOIC

0
PMCPB5530X,115

PMCPB5530X,115

Nexperia

MOSFET N/P-CH 20V 6HUSON

181
SH8K39GZETB

SH8K39GZETB

ROHM Semiconductor

4V DRIVE NCH+NCH MOSFET. SH8K39

2314
DMC2025UFDB-7

DMC2025UFDB-7

Zetex Semiconductors (Diodes Inc.)

MOSFET BVDSS: 8V-24V U-DFN2020-6

0
NDS8936

NDS8936

N-CHANNEL POWER MOSFET

10943
DMN2050LFDB-13

DMN2050LFDB-13

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 20V 3.3A 6UDFN

20000
DMG6602SVTQ-7

DMG6602SVTQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N/P-CH 30V TSOT26

0
IRF7104PBF

IRF7104PBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

0
NX3008PBKS,115

NX3008PBKS,115

Nexperia

MOSFET 2P-CH 30V 0.2A 6TSSOP

72727
SI7997DP-T1-GE3

SI7997DP-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 30V 60A PPAK SO-8

13151
AUIRF7341QTR

AUIRF7341QTR

IR (Infineon Technologies)

MOSFET 2N-CH 55V 5.1A 8SOIC

1928

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

RFQ BOM Call Skype Email
Top