Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PDTA144TT,215

PDTA144TT,215

Nexperia

NOW NEXPERIA PDTA144TT - SMALL S

102000

PDTD123YUF

PDTD123YUF

Nexperia

TRANS PREBIAS NPN 0.425W

0

PDTA124EU,115

PDTA124EU,115

Nexperia

TRANS PREBIAS PNP 50V SOT323

1309

PDTC144ETVL

PDTC144ETVL

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

9980

PDTB123EUX

PDTB123EUX

Nexperia

TRANS PREBIAS PNP 0.425W

0

PDTD123YT,215

PDTD123YT,215

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

111580

PDTD143ETR

PDTD143ETR

Nexperia

TRANS PREBIAS NPN 0.425W

2890

PDTD143EUX

PDTD143EUX

Nexperia

TRANS PREBIAS NPN 0.425W

0

NHDTA144ETVL

NHDTA144ETVL

Nexperia

NHDTA144ET/SOT23/TO-236AB

10000

PDTA115TT,215

PDTA115TT,215

Nexperia

TRANS PREBIAS PNP 50V TO236AB

0

PDTC124EQAZ

PDTC124EQAZ

Nexperia

TRANS PREBIAS NPN 3DFN

0

PDTD113ZTVL

PDTD113ZTVL

Nexperia

PDTD113ZT/SOT23/TO-236AB

8775

PDTC114YU,115

PDTC114YU,115

Nexperia

TRANS PREBIAS NPN 50V SOT323

17758

PDTA144ET,235

PDTA144ET,235

Nexperia

TRANS PREBIAS PNP 50V TO236AB

1400

PDTC123TU,115

PDTC123TU,115

Nexperia

TRANS PREBIAS NPN 200MW SOT323

0

PDTD123EUX

PDTD123EUX

Nexperia

TRANS PREBIAS NPN 0.425W

0

NHDTC123JUF

NHDTC123JUF

Nexperia

NHDTC123JU/SOT323/SC-70

9946

PDTA124XT,215

PDTA124XT,215

Nexperia

TRANS PREBIAS PNP 50V TO236AB

1269

PDTA143ZQAZ

PDTA143ZQAZ

Nexperia

TRANS PREBIAS PNP 3DFN

0

PDTB143XQAZ

PDTB143XQAZ

Nexperia

TRANS PREBIAS PNP 3DFN

0

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

RFQ BOM Call Skype Email
Top