Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
NHDTA124EUF

NHDTA124EUF

Nexperia

NHDTA124EU/SOT323/SC-70

9990

PDTC114TMB,315

PDTC114TMB,315

Nexperia

TRANS PREBIAS NPN 250MW 3DFN

0

PDTD114EUX

PDTD114EUX

Nexperia

TRANS PREBIAS NPN 0.425W

0

PDTA114YM,315

PDTA114YM,315

Nexperia

TRANS PREBIAS PNP 50V DFN1006-3

0

PDTC124TU,115

PDTC124TU,115

Nexperia

TRANS PREBIAS NPN 50V SOT323

0

PDTC114YMB,315

PDTC114YMB,315

Nexperia

TRANS PREBIAS NPN 250MW 3DFN

0

PDTC123ET,215

PDTC123ET,215

Nexperia

TRANS PREBIAS NPN 50V TO236AB

2857

PDTC143EMB,315

PDTC143EMB,315

Nexperia

TRANS PREBIAS NPN 250MW 3DFN

0

PDTA123JT,215

PDTA123JT,215

Nexperia

TRANS PREBIAS PNP 50V TO236AB

1555

PDTA144WT,215

PDTA144WT,215

Nexperia

TRANS PREBIAS PNP 50V TO236AB

0

NHDTA143ZUX

NHDTA143ZUX

Nexperia

NHDTA143ZU/SOT323/SC-70

33000

NHDTA114YUF

NHDTA114YUF

Nexperia

NHDTA114YU/SOT323/SC-70

10000

PDTA123ETVL

PDTA123ETVL

Nexperia

PDTA123ET/SOT23/TO-236AB

7275

PDTA114TM,315

PDTA114TM,315

Nexperia

TRANS PREBIAS PNP 250MW SOT883

0

PDTC143TM,315

PDTC143TM,315

Nexperia

TRANS PREBIAS NPN 50V DFN1006-3

0

PDTC144ET,215

PDTC144ET,215

Nexperia

TRANS PREBIAS NPN 50V TO236AB

13526

PBRN113ZT,215

PBRN113ZT,215

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

11194

PDTA143XMB,315

PDTA143XMB,315

Nexperia

TRANS PREBIAS PNP 250MW 3DFN

0

PDTB123EQAZ

PDTB123EQAZ

Nexperia

TRANS PREBIAS PNP 3DFN

0

PDTC123JM,315

PDTC123JM,315

Nexperia

NOW NEXPERIA PDTC123JM - SMALL S

10000

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

RFQ BOM Call Skype Email
Top