Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PDTA143TT,215

PDTA143TT,215

Nexperia

TRANS PREBIAS PNP 50V TO236AB

0

PDTD143XQAZ

PDTD143XQAZ

Nexperia

TRANS PREBIAS NPN 3DFN

0

PDTC114YM,315

PDTC114YM,315

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR,

154280

PDTD123YUX

PDTD123YUX

Nexperia

TRANS PREBIAS NPN 0.425W

0

PDTC143TMB,315

PDTC143TMB,315

Nexperia

NOW NEXPERIA PDTC143TMB - SMALL

117900

PDTA143XT,215

PDTA143XT,215

Nexperia

TRANS PREBIAS PNP 50V TO236AB

14533

PDTC144WU,115

PDTC144WU,115

Nexperia

NOW NEXPERIA PDTC144WU - SMALL S

0

PDTA143ZU,115

PDTA143ZU,115

Nexperia

TRANS PREBIAS PNP 50V SOT323

1645

PDTA143EM,315

PDTA143EM,315

Nexperia

NOW NEXPERIA PDTA143EM - SMALL S

189945

PDTC143TT,235

PDTC143TT,235

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

0

PDTB113EQAZ

PDTB113EQAZ

Nexperia

TRANS PREBIAS PNP 3DFN

0

PDTA115TU,115

PDTA115TU,115

Nexperia

NOW NEXPERIA PDTA115TU - SMALL S

295720

PDTC114ET,235

PDTC114ET,235

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

0

PDTC144TT,215

PDTC144TT,215

Nexperia

NOW NEXPERIA PDTC144TT - SMALL S

54200

PDTA143ET,215

PDTA143ET,215

Nexperia

TRANS PREBIAS PNP 250MW TO236AB

1672

PDTC115ET,215

PDTC115ET,215

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

292

PDTC143XMB,315

PDTC143XMB,315

Nexperia

TRANS PREBIAS NPN 250MW 3DFN

0

PDTA143XM,315

PDTA143XM,315

Nexperia

NOW NEXPERIA PDTA143XM - SMALL S

200000

PDTA113EM,315

PDTA113EM,315

Nexperia

NOW NEXPERIA PDTA113EM - SMALL S

140000

PDTC143XQAZ

PDTC143XQAZ

Nexperia

TRANS PREBIAS NPN 3DFN

0

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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