Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PDTD123ET,215

PDTD123ET,215

Nexperia

TRANS PREBIAS NPN 50V TO236AB

7

PDTC123JT,235

PDTC123JT,235

Nexperia

TRANS PREBIAS NPN 50V TO236AB

33293

PDTA143XQAZ

PDTA143XQAZ

Nexperia

TRANS PREBIAS PNP 3DFN

0

PDTA143EU,115

PDTA143EU,115

Nexperia

TRANS PREBIAS PNP 50V SOT323

280

NHDTC143ZTVL

NHDTC143ZTVL

Nexperia

NHDTC143ZT/SOT23/TO-236AB

9976

PDTC114TU,115

PDTC114TU,115

Nexperia

TRANS PREBIAS NPN 50V SOT323

42161

PDTC123EM,315

PDTC123EM,315

Nexperia

TRANS PREBIAS NPN 50V DFN1006-3

0

PDTA114EQAZ

PDTA114EQAZ

Nexperia

TRANS PREBIAS PNP 3DFN

0

PDTA114TMB,315

PDTA114TMB,315

Nexperia

TRANS PREBIAS PNP 50V DFN1006B-3

0

PDTA123EM,315

PDTA123EM,315

Nexperia

NOW NEXPERIA PDTA123EM - SMALL S

129976

PDTA113EU,115

PDTA113EU,115

Nexperia

NOW NEXPERIA PDTA113EU - SMALL S

430316

NHDTA114EUX

NHDTA114EUX

Nexperia

NHDTA114EU/SOT323/SC-70

3000

PDTD114EUF

PDTD114EUF

Nexperia

TRANS PREBIAS NPN 0.425W

0

PDTD113ZUF

PDTD113ZUF

Nexperia

TRANS PREBIAS NPN 0.425W

0

PDTA115ET,215

PDTA115ET,215

Nexperia

TRANS PREBIAS PNP 50V TO236AB

4478

PDTA123JM,315

PDTA123JM,315

Nexperia

NOW NEXPERIA PDTA123JM - SMALL S

0

PDTA114ET,235

PDTA114ET,235

Nexperia

TRANS PREBIAS PNP 50V TO236AB

0

PDTA123JQAZ

PDTA123JQAZ

Nexperia

TRANS PREBIAS PNP 3DFN

0

PDTC124ET,235

PDTC124ET,235

Nexperia

TRANS PREBIAS NPN 50V TO236AB

0

PDTD143XTVL

PDTD143XTVL

Nexperia

PDTD143 - 50V, 500 MA UPN RESIST

20000

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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