Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
BCR573E6327HTSA1

BCR573E6327HTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

0

BCR183E6433HTMA1

BCR183E6433HTMA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

85900

BCR196WE6327

BCR196WE6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

24000

BCR185WH6327

BCR185WH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

53635

BCR198TE6327

BCR198TE6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

27000

BCR166WH6327XTSA1

BCR166WH6327XTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

63000

BCR108E6327HTSA1

BCR108E6327HTSA1

IR (Infineon Technologies)

TRANS PREBIAS NPN 0.2W SOT23-3

24097

BCR162E6327HTSA1

BCR162E6327HTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

150000

BCR108WH6433XTMA1

BCR108WH6433XTMA1

IR (Infineon Technologies)

TRANS PREBIAS NPN 250MW SOT323-3

0

BCR135WH6327XTSA1

BCR135WH6327XTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

36901

BCR135WE6327

BCR135WE6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

0

BCR166WE6327

BCR166WE6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

0

BCR191WH6327XTSA1

BCR191WH6327XTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

0

BCR129E6327HTSA1

BCR129E6327HTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

54000

BCR192WH6327XTSA1

BCR192WH6327XTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

57000

BCR196WH6327XTSA1

BCR196WH6327XTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

240000

BCR196E6327HTSA1

BCR196E6327HTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

81000

BCR112WH6327XTSA1

BCR112WH6327XTSA1

IR (Infineon Technologies)

0.1A, 50V, NPN

21000

BCR166E6327HTSA1

BCR166E6327HTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

128000

BCR119E6327HTSA1

BCR119E6327HTSA1

IR (Infineon Technologies)

BCR11 - NPN SILICON DIGITAL TRAN

33000

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

RFQ BOM Call Skype Email
Top