Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
BCR192E6785HTSA1

BCR192E6785HTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

123000

BCR562E6327

BCR562E6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

0

BCR553E6327HTSA1

BCR553E6327HTSA1

IR (Infineon Technologies)

TRANS PREBIAS PNP 300MW SOT23-3

0

BCR158WH6327XTSA1

BCR158WH6327XTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

48000

BCR191E6327HTSA1

BCR191E6327HTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

48000

BCR198E6327

BCR198E6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

147000

BCR108WH6327XTSA1

BCR108WH6327XTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

105000

BCR512E6327HTSA1

BCR512E6327HTSA1

IR (Infineon Technologies)

TRANS PREBIAS NPN 0.33W SOT23-3

3536

BCR119WH6327XTSA1

BCR119WH6327XTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

108000

BCR142WH6327XTSA1

BCR142WH6327XTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

60000

BCR142E6327HTSA1

BCR142E6327HTSA1

IR (Infineon Technologies)

TRANS PREBIAS NPN 0.2W SOT23-3

12708

BCR129FE6327

BCR129FE6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

18000

BCR169WH6327XTSA1

BCR169WH6327XTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

0

BCR146E6327HTSA1

BCR146E6327HTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

51000

BCR135E6433HTMA1

BCR135E6433HTMA1

IR (Infineon Technologies)

TRANS PREBIAS NPN 200MW SOT23-3

0

BCR583E6327HTSA1

BCR583E6327HTSA1

IR (Infineon Technologies)

TRANS PREBIAS PNP 0.33W SOT23-3

0

BCR148WH6327XTSA1

BCR148WH6327XTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

63000

BCR198E6327HTSA1

BCR198E6327HTSA1

IR (Infineon Technologies)

TRANS PREBIAS PNP 50V SOT23-3

12237

BCR148E6327HTSA1

BCR148E6327HTSA1

IR (Infineon Technologies)

TRANS PREBIAS NPN 50V SOT23-3

7543

BCR116E6433HTMA1

BCR116E6433HTMA1

IR (Infineon Technologies)

TRANS PREBIAS NPN 200MW SOT23-3

0

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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