Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DDTD114GU-7-F

DDTD114GU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT323

0

DDTC144ECA-7-F

DDTC144ECA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT23-3

4880

DDTC143XCA-7-F

DDTC143XCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT23-3

77162

DDTD114EU-7-F

DDTD114EU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT323

0

DDTC115GUA-7-F

DDTC115GUA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT323

1109745000

DDTC123JE-7-F

DDTC123JE-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 150MW SOT523

15

ADTC114ECAQ-7

ADTC114ECAQ-7

Zetex Semiconductors (Diodes Inc.)

PREBIAS TRANSISTOR SOT23 T&R 3K

0

DDTA144TCA-7-F

DDTA144TCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 200MW SOT23-3

1263024000

DDTA143XE-7-F

DDTA143XE-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 150MW SOT523

63000

DDTA143FCA-7-F

DDTA143FCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 200MW SOT23-3

105000

DDTA114GCA-7-F

DDTA114GCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 200MW SOT23-3

1820

DDTD143TU-7-F

DDTD143TU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT323

0

DDTC114TCA-7-F

DDTC114TCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT23-3

18251000

DDTB143TC-7-F

DDTB143TC-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 200MW SOT23-3

0

DDTC113ZCA-7-F

DDTC113ZCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT23-3

1944

DDTD122TC-7-F

DDTD122TC-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT23-3

85588

DDTA114WE-7-F

DDTA114WE-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 150MW SOT523

0

DDTA114EUA-7-F

DDTA114EUA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 200MW SOT323

522

DDTD142JU-7-F

DDTD142JU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT323

3327

DDTC143FUA-7-F

DDTC143FUA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT323

842000

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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