Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DDTD114TU-7-F

DDTD114TU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT323

0

DDTA123YE-7-F

DDTA123YE-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 150MW SOT523

0

DDTC122LE-7-F

DDTC122LE-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 150MW SOT523

139776000

DDTC122TU-7-F

DDTC122TU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT323

1915

DDTB123TC-7-F

DDTB123TC-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 200MW SOT23-3

0

DDTD133HU-7-F

DDTD133HU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT323

0

DDTA143XCA-7-F

DDTA143XCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 200MW SOT23-3

101893000

DDTC144VCA-7-F

DDTC144VCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT23-3

435

DDTA123EE-7-F

DDTA123EE-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 150MW SOT523

0

DDTA113TCA-7-F

DDTA113TCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 200MW SOT23-3

159366000

DDTA114ECA-7-F

DDTA114ECA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 200MW SOT23-3

22668

DDTC114EUA-7-F

DDTC114EUA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT323

9542

DDTA124EE-7-F

DDTA124EE-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 150MW SOT523

0

DDTA123TE-7-F

DDTA123TE-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 150MW SOT523

0

DDTA143EE-7-F

DDTA143EE-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 150MW SOT523

0

DDTD123EC-7-F

DDTD123EC-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT23-3

0

DDTA123ECA-7-F

DDTA123ECA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 200MW SOT23-3

204539000

DDTA143ECA-7-F

DDTA143ECA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 200MW SOT23-3

142

ADTA143ZUAQ-7

ADTA143ZUAQ-7

Zetex Semiconductors (Diodes Inc.)

PREBIAS TRANSISTOR SOT323 T&R 3K

192000

DDTD113ZC-7-F

DDTD113ZC-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT23-3

139022

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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