Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTA144TETL

DTA144TETL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

2676

PDTC143EQAZ

PDTC143EQAZ

NXP Semiconductors

PDTC143/114/124/144EQA SERIES -

150000

NHDTC124ETVL

NHDTC124ETVL

Nexperia

NHDTC124ET/SOT23/TO-236AB

9790

DTC043TMT2L

DTC043TMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 50V VMT3

3195

FJN3304RBU

FJN3304RBU

SMALL SIGNAL BIPOLAR TRANSISTOR

79930

BCR148WH6327XTSA1

BCR148WH6327XTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

63000

DTA113ZCAHZGT116

DTA113ZCAHZGT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

1

DTA123EU3T106

DTA123EU3T106

ROHM Semiconductor

DTA123EU3 IS AN DIGITAL TRANSIST

2190

DTA123JEBHZGTL

DTA123JEBHZGTL

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (WITH BUI

3000

DTC144ECA-TP

DTC144ECA-TP

Micro Commercial Components (MCC)

TRANS PREBIAS NPN 200MW SOT23

0

DTC144EET1G

DTC144EET1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN 50V 100MA SC75

3222

DTC123JUA

DTC123JUA

Rectron USA

TRANS PRE-BIASED 200MA SOT-323

0

BCR198E6327HTSA1

BCR198E6327HTSA1

IR (Infineon Technologies)

TRANS PREBIAS PNP 50V SOT23-3

12237

PDTC143ZU,115

PDTC143ZU,115

Nexperia

TRANS PREBIAS NPN 50V SOT323

42291

RN1305,LF

RN1305,LF

Toshiba Electronic Devices and Storage Corporation

TRANS PREBIAS NPN 50V 0.1A USM

3000

FJY4006R

FJY4006R

0.1A, 50V, PNP

23895

DTA044TUBTL

DTA044TUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.2W UMT3F

450

BCR148E6327HTSA1

BCR148E6327HTSA1

IR (Infineon Technologies)

TRANS PREBIAS NPN 50V SOT23-3

7543

RN2307(TE85L,F)

RN2307(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TRANS PREBIAS PNP 50V 0.1A USM

306

DTA114YETL

DTA114YETL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

0

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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