Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTA143EMT2L

DTA143EMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 150MW VMT3

6805

DTC323TKT146

DTC323TKT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

665

DTA143EEFRATL

DTA143EEFRATL

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (AEC-Q101

3000

UNR212200L

UNR212200L

Panasonic

TRANS PREBIAS PNP 200MW MINI3

11764

DTC124EEBTL

DTC124EEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3F

2124

DTA114YCAHZGT116

DTA114YCAHZGT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

650

DTA124XCAHZGT116

DTA124XCAHZGT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

2630

NHDTC143ZTR

NHDTC143ZTR

Nexperia

NHDTC143ZT/SOT23/TO-236AB

5930

PDTB114ETVL

PDTB114ETVL

Nexperia

TRANS PREBIAS PNP 0.46W

0

FJN4310RTA

FJN4310RTA

SMALL SIGNAL BIPOLAR TRANSISTOR

0

UNR32A300L

UNR32A300L

Panasonic

TRANS PREBIAS NPN 100MW SSSMINI3

7348

DRC5143T0L

DRC5143T0L

Panasonic

TRANS PREBIAS NPN 150MW SMINI3

762

DRA5114E0L

DRA5114E0L

Panasonic

TRANS PREBIAS PNP 150MW SMINI3

5201

DDTA123JCA-7-F

DDTA123JCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 200MW SOT23-3

12810

FJV4109RMTF

FJV4109RMTF

SMALL SIGNAL BIPOLAR TRANSISTOR

0

FJV3110RMTF-ON

FJV3110RMTF-ON

0.1A, 40V, NPN

10000

PDTC144EE,115

PDTC144EE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

1876000

PDTC143ET,215

PDTC143ET,215

Nexperia

TRANS PREBIAS NPN 50V TO236AB

32189

FJY3003R

FJY3003R

SMALL SIGNAL BIPOLAR TRANSISTOR

24000

DTA114EMT2L

DTA114EMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 150MW VMT3

1989

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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