Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTC114YE-TP

DTC114YE-TP

Micro Commercial Components (MCC)

TRANS PREBIAS NPN 150MW SOT523

0

PDTA123YE,115

PDTA123YE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

20262

DRA3144E0L

DRA3144E0L

Panasonic

TRANS PREBIAS PNP 100MW SSSMINI3

8496

UNR31A500L

UNR31A500L

Panasonic

TRANS PREBIAS PNP 100MW SSSMINI3

8421

DTA114EUA-TP

DTA114EUA-TP

Micro Commercial Components (MCC)

TRANS PREBIAS PNP 200MW SOT323

0

RN2315TE85LF

RN2315TE85LF

Toshiba Electronic Devices and Storage Corporation

TRANS PREBIAS PNP 50V 0.1A USM

16010

NSVDTA115EET1G

NSVDTA115EET1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS PNP 0.2W SC75-3

108000

UNR222300L

UNR222300L

Panasonic

TRANS PREBIAS NPN 200MW MINI3

4549

BCR146E6327HTSA1

BCR146E6327HTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

51000

RN2101,LF(CT

RN2101,LF(CT

Toshiba Electronic Devices and Storage Corporation

TRANS PREBIAS PNP 50V 0.1A SSM

0

DDTC143ZCA-7-F

DDTC143ZCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT23-3

65903

DRC5115T0L

DRC5115T0L

Panasonic

TRANS PREBIAS NPN 150MW SMINI3

3000

DTA143XUA-TP

DTA143XUA-TP

Micro Commercial Components (MCC)

PNPDIGITALTRANSISTORSSOT-323

170

PDTC114EU,115

PDTC114EU,115

Nexperia

TRANS PREBIAS NPN 50V SOT323

269325

DRA2144T0L

DRA2144T0L

Panasonic

TRANS PREBIAS PNP 200MW MINI3

6000

UNR211V00L

UNR211V00L

Panasonic

TRANS PREBIAS PNP 200MW MINI3

2620

FJV3113RMTF-ON

FJV3113RMTF-ON

0.1A, 50V, NPN

30000

DTA044TEBTL

DTA044TEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

3000

DTC144WETL

DTC144WETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

2330

SMUN2111T1G

SMUN2111T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS PNP 50V 100MA SC59

4225

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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