Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
JANTX2N3637L

JANTX2N3637L

Roving Networks / Microchip Technology

TRANS PNP 175V 1A

0

JAN2N4150

JAN2N4150

Roving Networks / Microchip Technology

TRANS NPN 70V 10A TO-5

0

JANTX2N2905A

JANTX2N2905A

Roving Networks / Microchip Technology

TRANS PNP 60V 0.6A

0

JANTX2N3442

JANTX2N3442

Roving Networks / Microchip Technology

TRANS NPN 140V 10A TO-3

0

JAN2N2605

JAN2N2605

Roving Networks / Microchip Technology

TRANS PNP 60V 0.03A TO46

0

2N3440L

2N3440L

Roving Networks / Microchip Technology

TRANS NPN 250V 1A TO-5

0

2N6308

2N6308

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

2N2222AE4

2N2222AE4

Roving Networks / Microchip Technology

TRANS NPN 50V 0.8A TO-18

0

JANTX2N2219AL

JANTX2N2219AL

Roving Networks / Microchip Technology

TRANS NPN 50V 0.8A TO46

0

JANTX2N3055

JANTX2N3055

Roving Networks / Microchip Technology

TRANS NPN 70V 15A TO-3

0

JANTX2N2605

JANTX2N2605

Roving Networks / Microchip Technology

TRANS PNP 60V 0.03A

0

JAN2N2906A

JAN2N2906A

Roving Networks / Microchip Technology

TRANS PNP 60V 0.6A TO18

0

2N2907AUB

2N2907AUB

Roving Networks / Microchip Technology

TRANS PNP 60V 0.6A

1593

2N3735L

2N3735L

Roving Networks / Microchip Technology

TRANS NPN 40V 1.5A TO-5

0

JANTX2N3772

JANTX2N3772

Roving Networks / Microchip Technology

TRANS NPN 60V 20A TO-3

0

JAN2N2219A

JAN2N2219A

Roving Networks / Microchip Technology

TRANS NPN 50V 0.8A

0

JANS2N3700

JANS2N3700

Roving Networks / Microchip Technology

TRANS NPN 80V 1A TO-18

150

JANTX2N5663

JANTX2N5663

Roving Networks / Microchip Technology

TRANS NPN 300V 2A TO-5

0

2N6277

2N6277

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

2N3501UB

2N3501UB

Roving Networks / Microchip Technology

TRANS NPN 150V 0.3A

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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