Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N3743

2N3743

Roving Networks / Microchip Technology

PNP TRANSISTOR

0

JANTX2N2222A

JANTX2N2222A

Roving Networks / Microchip Technology

TRANS NPN 50V 0.8A TO18

0

2N6546

2N6546

Roving Networks / Microchip Technology

PNP TRANSISTOR

0

2N6297

2N6297

Roving Networks / Microchip Technology

PNP TRANSISTOR

0

2N2218A

2N2218A

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

2N3763

2N3763

Roving Networks / Microchip Technology

PNP TRANSISTOR

0

JANTX2N3440L

JANTX2N3440L

Roving Networks / Microchip Technology

TRANS NPN 250V 1A

0

JANTXV2N3019S

JANTXV2N3019S

Roving Networks / Microchip Technology

TRANS NPN 80V 1A

0

2N3637UB

2N3637UB

Roving Networks / Microchip Technology

TRANS PNP 175V 1A 3PIN SMD

0

JANTX2N3700UB

JANTX2N3700UB

Roving Networks / Microchip Technology

TRANS NPN 80V 1A

0

JANTX2N720A

JANTX2N720A

Roving Networks / Microchip Technology

TRANS NPN 80V 0.5A TO-18

0

2N3501

2N3501

Roving Networks / Microchip Technology

TRANS NPN 150V 0.3A TO-39

1

2N6384

2N6384

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

2N5885

2N5885

Roving Networks / Microchip Technology

PNP POWER TRANSISTOR SILICON AMP

0

JANTXV2N3868S

JANTXV2N3868S

Roving Networks / Microchip Technology

TRANS PNP 60V 0.003A TO39

0

JANTX2N3735

JANTX2N3735

Roving Networks / Microchip Technology

TRANS NPN 40V 1.5A

0

JAN2N3439

JAN2N3439

Roving Networks / Microchip Technology

TRANS NPN 350V 1A

0

JANTX2N5667

JANTX2N5667

Roving Networks / Microchip Technology

TRANS NPN 300V 5A TO-5

0

2N2896

2N2896

Roving Networks / Microchip Technology

BJTS

0

2N2605

2N2605

Roving Networks / Microchip Technology

TRANS PNP 60V 0.03A TO-46

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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