Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PMBT3904/8,215

PMBT3904/8,215

NXP Semiconductors

TRANS PNP SWITCHING TO-236AB

0

BC337-25,126

BC337-25,126

NXP Semiconductors

TRANS NPN 45V 0.5A TO92

0

PMEM4030NS,115

PMEM4030NS,115

NXP Semiconductors

TRANS NPN 50V 2A SOT96-1

0

2N3904,116

2N3904,116

NXP Semiconductors

TRANS NPN 40V 0.2A TO92

0

2PC1815GR,116

2PC1815GR,116

NXP Semiconductors

TRANS NPN 50V 0.15A TO-92

0

PN2222A,412

PN2222A,412

NXP Semiconductors

TRANS NPN 40V 0.6A TO92

0

2PC1815GR,412

2PC1815GR,412

NXP Semiconductors

TRANS NPN 50V 0.15A TO-92

0

2N5551,412

2N5551,412

NXP Semiconductors

TRANS NPN 160V 0.3A TO-92

0

MPSA92,126

MPSA92,126

NXP Semiconductors

TRANS PNP 300V 0.1A SOT54

0

2PC4617S,115

2PC4617S,115

NXP Semiconductors

TRANS NPN 50V 0.15A SC-75

0

BC640,116

BC640,116

NXP Semiconductors

TRANS PNP 80V 1A TO-92

0

PH2369,112

PH2369,112

NXP Semiconductors

TRANS NPN 15V 0.2A SOT54

0

BC640,112

BC640,112

NXP Semiconductors

TRANS PNP 80V 1A TO-92

0

BC337-16,126

BC337-16,126

NXP Semiconductors

TRANS NPN 45V 0.5A TO92

0

PBSS5160K,115

PBSS5160K,115

NXP Semiconductors

TRANS PNP 60V 0.7A SC59

0

PMEM4030PS,115

PMEM4030PS,115

NXP Semiconductors

TRANS PNP 50V 2A SOT96-1

0

PMSTA3904,135

PMSTA3904,135

NXP Semiconductors

TRANS NPN 40V 0.2A SOT323

0

BC846BT,115

BC846BT,115

NXP Semiconductors

TRANS NPN 65V 0.1A SOT416

0

BC547,116

BC547,116

NXP Semiconductors

TRANS NPN 45V 0.1A TO-92

0

BC546B,126

BC546B,126

NXP Semiconductors

TRANS NPN 65V 0.1A TO-92

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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