Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PHD13005AD,127

PHD13005AD,127

NXP Semiconductors

TRANS NPN 700V 4A DPAK

0

BSR16/LF1R

BSR16/LF1R

NXP Semiconductors

TRANSISTOR PNP

0

BC557B,126

BC557B,126

NXP Semiconductors

TRANS PNP 45V 0.1A TO-92

0

PMST5401,135

PMST5401,135

NXP Semiconductors

TRANS PNP 150V 0.3A SOT323

0

BUT11AI,127

BUT11AI,127

NXP Semiconductors

TRANS NPN 450V 5A TO220AB

0

PMBT4403/MIGR

PMBT4403/MIGR

NXP Semiconductors

TRANS PNP SWITCHING TO-236AB

0

2N5401,412

2N5401,412

NXP Semiconductors

TRANS PNP 150V 0.3A TO-92

0

PBSS5140S,126

PBSS5140S,126

NXP Semiconductors

TRANS PNP 40V 1A SOT54

0

BC639,112

BC639,112

NXP Semiconductors

TRANS NPN 80V 1A TO-92

0

BC550C,116

BC550C,116

NXP Semiconductors

TRANS NPN 45V 0.1A TO-92

0

BC879,112

BC879,112

NXP Semiconductors

TRANS NPN DARL 80V 1A TO-92

0

BC846T,115

BC846T,115

NXP Semiconductors

TRANS NPN 65V 0.1A SOT416

0

BUT12AI,127

BUT12AI,127

NXP Semiconductors

TRANS NPN 450V 8A TO220AB

0

PBSS9110S,126

PBSS9110S,126

NXP Semiconductors

TRANS PNP 100V 1A TO92

0

PBSS5350S,126

PBSS5350S,126

NXP Semiconductors

TRANS PNP 50V 3A TO92

0

2PB710AQ,115

2PB710AQ,115

NXP Semiconductors

TRANS PNP 50V 0.5A SC59

0

PBSS4140S,126

PBSS4140S,126

NXP Semiconductors

TRANS NPN 40V 1A SOT54

0

BC640,126

BC640,126

NXP Semiconductors

TRANS PNP 80V 1A TO-92

0

BF420,116

BF420,116

NXP Semiconductors

TRANS NPN 300V 0.05A SOT54

0

2PA1576S/ZLX

2PA1576S/ZLX

NXP Semiconductors

TRANS PNP GEN PURPOSE SC70

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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