Transistors - Bipolar (BJT)

Transistors - Bipolar (BJT) - Single

Part Number	Description / PDF	Quantity
BUL742A STMicroelectronics	TRANS NPN 400V 4A TO-220	0
STN951 STMicroelectronics	TRANS PNP 60V 5A SOT-223	2927
D45H11FP STMicroelectronics	TRANS PNP 80V 10A TO-220FP	1525
TIP105 STMicroelectronics	TRANS PNP DARL 60V 8A TO-220	1924
STN2580 STMicroelectronics	TRANS NPN 400V 1A SOT-223	5182
BDX53B STMicroelectronics	TRANS NPN DARL 80V 8A TO-220	1887
BUL742C STMicroelectronics	TRANS NPN 400V 4A TO-220	873
2SD882 STMicroelectronics	TRANS NPN 30V 3A SOT32 TO-126	1961
ST8812FX STMicroelectronics	TRANS NPN 600V 7A ISOWATT218FX	0
D45H11 STMicroelectronics	POWER BIPOLAR TRANSISTOR, PNP	2936
TIP121 STMicroelectronics	TRANS NPN DARL 80V 5A TO-220	3610
MD2310FX STMicroelectronics	TRANS NPN 700V 14A TO-3PF	19
MJD112T4 STMicroelectronics	TRANS NPN DARL 100V 2A DPAK	11686
STPSA92 STMicroelectronics	TRANS PNP 300V 0.5A TO-92	0
2ST501T STMicroelectronics	TRANS NPN DARL 350V 4A TO-220	4439
TIP127 STMicroelectronics	TRANS PNP DARL 100V 5A TO-220	7563
BD239C STMicroelectronics	TRANS NPN 100V 2A TO-220	1747
ST13005 STMicroelectronics	TRANS NPN 400V 4A TO-220	3212
BD241C STMicroelectronics	TRANS NPN 100V 3A TO-220	2711
BDW93C STMicroelectronics	TRANS NPN DARL 100V 12A TO-220	4929

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

Type	Functional Characteristics	Application Examples
NPN Transistor	Majority carriers: electrons. Requires positive base current for conduction.	Low-noise amplifiers, digital logic circuits
PNP Transistor	Majority carriers: holes. Conducts with negative base current.	Power supply circuits, motor controllers
High-Frequency BJT	Optimized for RF/microwave signal amplification (f_T > 100 MHz)	Wireless communication systems, radar
Power BJT	High current/voltage ratings (I_C > 1A, V_CE > 50V)	Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

Emitter: Heavily doped region emitting charge carriers
Base: Thin, lightly doped middle region controlling carrier flow
Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

Parameter	Description	Importance
Current Gain (h_FE)	Ratio of collector to base current (10-1000)	Determines amplification capability
Transition Frequency (f_T)	Frequency at which current gain drops to 1	Limits high-frequency performance
Max Collector Current (I_Cmax)	Maximum allowable continuous collector current	Defines power handling capability
Breakdown Voltage (V_CEO)	Max voltage between collector and emitter	Prevents device failure under stress
Saturation Voltage (V_CEsat)	Voltage drop in fully conducting state	Affects power efficiency in switching

5. Application Areas

Consumer Electronics: Audio amplifiers, LED drivers
Automotive: Engine control units, electric vehicle inverters
Industrial: PLCs, motor controllers
Telecommunications: RF power amplifiers, fiber optic transceivers
Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

Manufacturer	Product Series	Key Specifications	Typical Use
ON Semiconductor	2N3904	hFE: 100-300, fT: 300 MHz	General-purpose switching
Infineon	BC547	VCEO: 50V, ICmax: 100mA	Analog signal amplification
STMicroelectronics	2SD2656	ICmax: 15A, VCEO: 80V	Power inverter applications
Diodes Inc.	BFR93A	fT: 10 GHz, Noise Figure: 2dB	High-frequency front-end amplifiers

7. Selection Guidelines

Determine operating frequency: Select fT > 3 target frequency
Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
Thermal considerations: Calculate power dissipation (P=V_CE I_C)
Package type: TO-92 for low power, TO-220 for high-power applications
Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

High-frequency BJTs operating beyond 100 GHz for 6G communication
Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
Wide-bandgap materials (SiC/GaN) for higher power density
Miniaturization through chip-scale packaging
Improved thermal management solutions for automotive applications