Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SB860-E

2SB860-E

Renesas Electronics America

POWER BIPOLAR TRANSISTOR, PNP

997

2SA1462-T1B-A

2SA1462-T1B-A

Renesas Electronics America

HIGH SPEED PNP TRANSISTOR

1558307

2SD789ETZ

2SD789ETZ

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSTR NPN

2500

2SD1163A-E

2SD1163A-E

Renesas Electronics America

POWER BIPOLAR TRANSISTOR NPN

2133

2SA673AKCTZ

2SA673AKCTZ

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANS PNP

10000

2SD1126K-E

2SD1126K-E

Renesas Electronics America

NPN TRIPLE DIFFUSED TRANSISTOR

90

2SB955K

2SB955K

Renesas Electronics America

POWER BIPOLAR TRANSISTOR, PNP

3326

2SD560-AZ

2SD560-AZ

Renesas Electronics America

POWER BIPOLAR TRANSISTOR NPN

0

2SD1691-AZ

2SD1691-AZ

Renesas Electronics America

POWER BIPOLAR TRANSISTOR NPN

10720

2SA952-A

2SA952-A

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANS PNP

1385539

RJK4512DPP-E0#T2

RJK4512DPP-E0#T2

Renesas Electronics America

N-CHANNEL POWER MOSFET

3936

2SC2853E-E

2SC2853E-E

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSTR NPN

35125

2SC5594XP-TL-H

2SC5594XP-TL-H

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSTR NPN

33000

2SC2619FCTR-E

2SC2619FCTR-E

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSISTOR

111000

2SC3365-E

2SC3365-E

Renesas Electronics America

POWER BIPOLAR TRANSISTOR NPN

858

2SC5289-T1-A

2SC5289-T1-A

Renesas Electronics America

NPN BIPOLAR TRANSISTOR

27000

2SA673AC-E

2SA673AC-E

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANS PNP

10000

2SA673B-E

2SA673B-E

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSISTOR,

5000

2SD768K-E

2SD768K-E

Renesas Electronics America

POWER BIPOLAR TRANSISTOR NPN

0

2SC2462LDTR-E

2SC2462LDTR-E

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSISTOR,

39000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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