Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SD974-E

2SD974-E

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSTR NPN

10000

2SC5594XP-TL-E

2SC5594XP-TL-E

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSTR NPN

11629

2SD2383-T2B-A

2SD2383-T2B-A

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSTR NPN

6000

2SD882-AZ

2SD882-AZ

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSTR NPN

543893

UPA2004GR-A

UPA2004GR-A

Renesas Electronics America

DARLINGTON TRANSISTOR ARRAY

1082

2SD1527-E

2SD1527-E

Renesas Electronics America

POWER BIPOLAR TRANSISTOR NPN

5379

2SB1091

2SB1091

Renesas Electronics America

POWER BIPOLAR TRANSISTOR, PNP

2143

NESG220034-T1-A

NESG220034-T1-A

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSISTOR

2583

2SC2735JTL-E

2SC2735JTL-E

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSTR NPN

42000

2SC945A-A

2SC945A-A

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSTR NPN

112679

2SD768K

2SD768K

Renesas Electronics America

NPN EPITAXIAL TRANSISTOR

0

2SC5773JR-TL-E

2SC5773JR-TL-E

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSTR NPN

1400

2SA673AD-E

2SA673AD-E

Renesas Electronics America

0.5A, 50V, PNP

22500

2SC2816-E

2SC2816-E

Renesas Electronics America

POWER BIPOLAR TRANSISTOR NPN

0

2SD1695-AZ

2SD1695-AZ

Renesas Electronics America

POWER BIPOLAR TRANSISTOR NPN

13600

2SA1009-AZ

2SA1009-AZ

Renesas Electronics America

POWER BIPOLAR TRANSISTOR, PNP

5093

2SA1743-AZ

2SA1743-AZ

Renesas Electronics America

POWER BIPOLAR TRANSISTOR, PNP

22817

2SC2688-AZ

2SC2688-AZ

Renesas Electronics America

POWER BIPOLAR TRANSISTOR NPN

70735

2SD2161-AZ

2SD2161-AZ

Renesas Electronics America

POWER BIPOLAR TRANSISTOR NPN

4347

2SA673ABTZ-E

2SA673ABTZ-E

Renesas Electronics America

0.5A, 50V, PNP

35000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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